BYV32E-200,127 NXP Semiconductors, BYV32E-200,127 Datasheet - Page 7

• Manufacturer Part Number: BYV32E-200,127
• Description: DIODE FAST DUAL 20A 200V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1667-5; 934011690127; BYV32E-200

NXP Semiconductors
8. Revision history
Table 7.
BYV32E-200_4
Product data sheet
Document ID
BYV32E-200_4
Modifications:
BYV32E_SERIES_3
BYV32E_SERIES_2
BYV32EB_SERIES_1
Revision history
Release date
20090227
20010301
19980701
19960801
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•
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline updated.
Type number BYV32E-200 separated from data sheet BYV32E_SERIES_3
Data sheet status
Product data sheet
Product specification
Product specification
Product specification
Rev. 04 — 27 February 2009
Dual rugged ultrafast rectifier diode, 20 A, 200 V
Change notice
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-
-
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BYV32E-200
Supersedes
BYV32E_SERIES_3
BYV32E_SERIES_2
BYV32EB_SERIES_1
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© NXP B.V. 2009. All rights reserved.
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