BYV32E-200,127 NXP Semiconductors, BYV32E-200,127 Datasheet - Page 4

• Manufacturer Part Number: BYV32E-200,127
• Description: DIODE FAST DUAL 20A 200V TO220AB
• Manufacturer: NXP Semiconductors

Specifications of BYV32E-200,127

• Package / Case: TO-220AB-3
• Voltage - Forward (vf) (max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 30µA @ 200V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 200V
• Reverse Recovery Time (trr): 25ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole
• Product: Ultra Fast Recovery Rectifier
• Configuration: Dual Common Cathode
• Reverse Voltage: 200 V
• Forward Voltage Drop: 1.15 V
• Recovery Time: 25 ns
• Forward Continuous Current: 20 A
• Max Surge Current: 137 A
• Reverse Current Ir: 30 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-1667-5; 934011690127; BYV32E-200

NXP Semiconductors
5. Thermal characteristics
Table 5.
6. Characteristics
Table 6.
BYV32E-200_4
Product data sheet
Symbol
R
R
Symbol
Static characteristics
V
I
Dynamic characteristics
Q
t
V
R
rr
Fig 3.
F
FR
th(j-mb)
th(j-a)
r
Transient thermal impedance from junction to mounting base as a function of pulse width
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to mounting
base
thermal resistance from
junction to ambient
Parameter
forward voltage
reverse current
recovered charge
reverse recovery time
forward recovery
voltage
Z
(K/W)
th(j-mb)
10
10
10
Conditions
with heatsink compound; both diodes
conducting
with heatsink compound; per diode; see
Figure 3
Conditions
I
I
V
V
I
T
I
ramp recovery; T
I
measured at reverse current = 0.25 A;
T
I
Figure 7
F
F
F
F
F
F
10
−1
−2
−3
j
j
R
R
1
10
= 20 A; T
= 8 A; T
= 2 A; V
= 1 A; V
= 0.5 A; I
= 1 A; dI
= 25 °C
= 25 °C; see
= 200 V; T
= 200 V; T
−6
10
−5
j
R
R
F
Rev. 04 — 27 February 2009
= 150 °C; see
R
j
/dt = 10 A/µs; T
= 30 V; dI
= 30 V; dI
= 25 °C
= 1 A; step recovery;
10
j
j
= 100 °C
= 25 °C
Figure 6
−4
j
= 25 °C; see
10
−3
F
F
/dt = 20 A/µs;
/dt = 100 A/µs;
10
Figure 4
P
−2
j
= 25 °C; see
Dual rugged ultrafast rectifier diode, 20 A, 200 V
10
t
Figure 5
p
−1
T
003aac980
δ =
1
t
p
T
(s)
t
t
p
10
Min
-
-
-
Min
-
-
-
-
-
-
-
-
BYV32E-200
Typ
-
-
60
Typ
1
0.72
0.2
6
8
20
10
-
© NXP B.V. 2009. All rights reserved.
Max
1.6
2.4
-
Max
1.15
0.85
0.6
30
12.5
25
20
1
Unit
K/W
K/W
K/W
Unit
V
V
mA
µA
nC
ns
ns
V
4 of 9