STPS30L45CW STMicroelectronics, STPS30L45CW Datasheet - Page 3

• Manufacturer Part Number: STPS30L45CW
• Description: DIODE SCHOTTKY 45V 15A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS30L45CW

• Voltage - Forward (vf) (max) @ If: 550mV @ 15A
• Current - Reverse Leakage @ Vr: 400µA @ 45V
• Current - Average Rectified (io) (per Diode): 15A
• Voltage - Dc Reverse (vr) (max): 45V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

STPS30L45C
Table 4.
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.330 x I
Figure 1.
Figure 3.
Symbol
0.001
0.01
12
10
0.1
V
8
6
4
2
0
I
R
1
0.01
F
0
PF(av)(W)
(1)
P
(1)
P
ARM
ARM
2
(1 µs)
(t p )
Reverse leakage current
Forward voltage drop
Static electrical characteristics (per diode)
0.1
Average forward power dissipation
versus average forward current
(per diode)
Normalized avalanche power
derating versus pulse duration
4
δ = 0.05
6
δ = 0.1
Parameter
8
1
IF(av) (A)
t (µs)
δ = 0.2
p
10
12
10
δ = 0.5
14
16
100
δ
=tp/T
T
T
T
T
T
T
j
j
j
j
j
j
δ = 1
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
18
Doc ID 8002 Rev 4
T
tp
1000
20
Test Conditions
Figure 2.
Figure 4.
1.2
0.8
0.6
0.4
0.2
18
16
14
12
10
1
0
8
6
4
2
0
25
0
P
IF(av)(A)
ARM
V
I
I
I
I
P
δ
F
F
F
F
ARM
=tp/T
R
= 15 A
= 15 A
= 30 A
= 30 A
(25 °C)
= V
(T j )
T
25
RRM
50
Average forward current versus
ambient temperature
(
Normalized avalanche power
derating versus junction
temperature
δ
tp
= 0.5, per diode)
Rth(j-a)=15°C/W
50
Rth(j-a)=Rth(j-c)
75
Min.
F(AV)
Tamb(°C)
T (°C)
75
j
+ 0.011 I
Typ.
0.42
0.59
100
100
100
TO-220AB/TO-247/I²PAK/D²PAK
TO-220FPAB
Characteristics
F
2
Max.
0.55
0.50
0.74
0.67
(RMS)
200
0.4
125
125
Unit
mA
mA
150
V
150
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