STPS40L40CW STMicroelectronics, STPS40L40CW Datasheet

DIODE SCHOTTKY 40V 20A TO-247

STPS40L40CW

Manufacturer Part Number
STPS40L40CW
Description
DIODE SCHOTTKY 40V 20A TO-247
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS40L40CW

Voltage - Forward (vf) (max) @ If
530mV @ 20A
Current - Reverse Leakage @ Vr
800µA @ 40V
Current - Average Rectified (io) (per Diode)
20A
Voltage - Dc Reverse (vr) (max)
40V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Common Cathode
Mounting Type
Through Hole, Radial
Package / Case
TO-247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
MAIN PRODUCTS CHARACTERISTICS
FEATURES AND BENEFITS
n
n
n
DESCRIPTION
Dual center tap Schottky barrier rectifier designed
for high frequency Switched Mode Power Supplies
and DC to DC converters.
Packaged in TO-220AB and TO-247 this device is
intended for use in low voltage, high frequency
inverters, free-wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values, per diode)
* :
July 2003 - Ed: 7A
Symbol
I
LOW FORWARD VOLTAGE DROP MEANING
VERY SMALL CONDUCTION LOSSES
LOW DYNAMIC LOSSES AS A RESULT OF
THE SCHOTTKY BARRIER
AVALANCHE CAPABILITY SPECIFIED
V
F(RMS)
P
dV/dt
I
I
I
I
F(AV)
T
dPtot
RRM
FSM
RSM
RRM
ARM
Tj
dTj
stg
V
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Rth j
(
1
a
)
thermal runaway condition for a diode on its own heatsink
LOW DROP POWER SCHOTTKY RECTIFIER
2 x 20 A
150 °C
0.49 V
40 V
Parameter
Tc = 130 C
tp = 10 ms Sinusoidal
tp = 2 µs square F = 1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
= 0.5
STPS40L40CT
TO-220AB
STPS40L40CT/CW
Per diode
Per device
A1
A2
A1
K
A2
- 65 to + 150
STPS40L40CW
10000
Value
8100
230
150
40
30
20
40
2
3
TO-247
K
A1
Unit
V/µs
K
W
V
A
A
A
A
A
C
C
A2
1/5

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STPS40L40CW Summary of contents

Page 1

... Rth July 2003 - Ed 150 °C 0.49 V TO-220AB STPS40L40CT Parameter Tc = 130 Sinusoidal µs square F = 1kHz tp = 100 µs square tp = 1µ 25°C STPS40L40CT/ TO-247 STPS40L40CW Value Per diode Per device 40 230 2 3 8100 - 150 150 10000 Unit V/µ ...

Page 2

STPS40L40CT/CW THERMAL RESISTANCES Symbol R Junction to case th (j-c) R th(c) When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1 th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage ...

Page 3

Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode). IM(A) 250 225 200 175 150 125 100 t(s) =0.5 0 1E-3 1E-2 Fig. 7: Reverse leakage current versus ...

Page 4

STPS40L40CT/CW PACKAGE MECHANICAL DATA TO-220AB H2 Dia COOLING METHOD : C n RECOMMENDED TORQUE VALUE : 0.55M.N n MAXIMUM TORQUE VALUE : 0.70 M.N n 4/5 REF. Millimeters Min. A ...

Page 5

... Ordering type Marking STPS40L40CT STPS40L40CT STPS40L40CW STPS40L40CW EPOXY MEETS UL94,V0 n Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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