STPS40L40CW STMicroelectronics, STPS40L40CW Datasheet - Page 3

• Manufacturer Part Number: STPS40L40CW
• Description: DIODE SCHOTTKY 40V 20A TO-247
• Manufacturer: STMicroelectronics

Specifications of STPS40L40CW

• Voltage - Forward (vf) (max) @ If: 530mV @ 20A
• Current - Reverse Leakage @ Vr: 800µA @ 40V
• Current - Average Rectified (io) (per Diode): 20A
• Voltage - Dc Reverse (vr) (max): 40V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

Fig. 5: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode).
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
250
225
200
175
150
125
100
5E+2
1E+2
1E+1
1E+0
200
100
1E-1
1E-2
75
50
25
10
1E-3
0
1
0.0
IM(A)
IFM(A)
0
I
IR(mA)
M
Tj=125°C
0.2
Typical values
Tj=150°C
5
=0.5
t
0.4
Tj=125°C
Tj=25°C
Tj=75°C
Tj=150°C
10
1E-2
Tj=25°C
Tj=75°C
0.6
15
t(s)
0.8
20
VFM(V)
1.0
VR(V)
1E-1
25
1.2
30
Tc=125°C
Tc=25°C
1.4
Tc=75°C
35
1E+0
1.6
40
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration.
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1.0
0.8
0.6
0.4
0.2
0.0
5.0
1.0
0.1
1E-4
1
Zth(j-c)/Rth(j-c)
C(nF)
= 0.5
= 0.2
= 0.1
Single pulse
2
1E-3
5
VR(V)
tp(s)
1E-2
STPS40L40CT/CW
10
1E-1
20
=tp/T
T
F=1MHz
Tj=25°C
tp
1E+0
3/5
50