DSEE55-24N1F IXYS, DSEE55-24N1F Datasheet

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DSEE55-24N1F

Manufacturer Part Number
DSEE55-24N1F
Description
DIODE HFRED 2400V 55A I4-PAC
Manufacturer
IXYS
Series
HiPerFRED™r
Datasheet
1.DSEE55-24N1F.pdf (4 pages)

Specifications of DSEE55-24N1F

Voltage - Forward (vf) (max) @ If
2.5V @ 40A
Current - Reverse Leakage @ Vr
1mA @ 2400V
Current - Average Rectified (io) (per Diode)
55A
Voltage - Dc Reverse (vr) (max)
2400V (2.4kV)
Reverse Recovery Time (trr)
220ns
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Diode Configuration
1 Pair Series Connection
Mounting Type
Through Hole, Radial
Package / Case
ISOPLUS i4-PAC™
Vrrm, (v)
1200
Ifavm, D = 0.5, Total, (a)
60
Ifavm, D = 0.5, Per Diode, (a)
60
@ Tc, (°c)
110
Vf, Max, If=ifavm, (v)
1.56
@ Tvjm, (°c)
150
Trr, Typ, Tvj =25°c, (ns)
75
Irm , Typ, Tvj =100°c, (a)
60
@ -di/dt, (a/µs)
600
Tvjm, (°c)_
175
Rthjc, Max, (k/w)
0.60
Package Style
ISOPLUS i4-PAC™ (3 - Lead)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
DSEE55-24N1F
Manufacturer:
IR
Quantity:
3 491
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
DSEE55-24N1F
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
Part number
DSEE55-24N1F
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
Symbol
V
V
V
r
T
P
I
I
t
C
IXYS reserves the right to change limits, conditions and dimensions.
©
I
I
R
Features / Advantages:
R
FAV
FSM
RM
F
rr
RRM
F0
VJ
tot
- Power dissipation within the diode
- Turn-on loss in the commutating switch
F
J
thJC
2011 IXYS all rights reserved
Definition
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
threshold voltage
slope resistance
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
for power loss calculation only
● Antiparallel diode for high frequency
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
● Uninterruptible power supplies (UPS)
rectangular
I
-di
Applications:
Conditions
V
V
I
I
I
I
t = 10 ms
V =
F
F
F
F
F
R
R
R
switching devices
supplies (SMPS)
=
F
=
=
=
=
=
=
/dt
600
1200
1200
60
120
120
Data according to IEC 60747and per diode unless otherwise specified
=
1
60
60
A;
V;
V
V
A
A
A
A
600
(50 Hz), sine
V
R
f = 1 MHz
A/µs
=
d =
3
600
0.5
V
5
T
T
T
T
T
T
T
T
T
T
T = 100°C
T
T = 100°C
T
VJ
VJ
VJ
VJ
VJ
C
VJ
C
VJ
VJ
VJ
VJ
VJ
VJ
= 25
=
=
=
=
= 110°C
= 175°C
=
= 45°C
=
=
=
150
150
25
25
25
25
25
25
● Housing:
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
V
I
t
Package:
°C
°C
°C
°C
°C
°C
°C
°C
°C
FAV
rr
RRM
DSEE55-24N1F
min.
=
=
=
-55
R a t i n g s
i4-Pac
1200
typ.
220
48
35
60
75
Backside: isolated
60
40 ns
max.
1200
2.45
2.90
1.56
2.00
0.97
0.60
V
A
175
250
800
6.8
60
1
4
20110215a
Unit
K/W
mΩ
mA
mA
pF
°C
ns
ns
W
V
V
V
V
V
A
V
A
A
A

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DSEE55-24N1F Summary of contents

Page 1

... 100° -di /dt = 600 A/µ 100° 600 MHz Data according to IEC 60747and per diode unless otherwise specified DSEE55-24N1F V = 1200 V RRM FAV Backside: isolated Package: ● Housing: i4-Pac ●rDCB isolated backside ●rIsolation Voltage 3000 V ●rEpoxy meets UL 94V-0 ●rRoHS compliant min. ...

Page 2

... IXYS all rights reserved © Conditions per terminal second minute terminal to terminal terminal to backside Part Name Marking on Product DSEE55-24N1F Data according to IEC 60747and per diode unless otherwise specified DSEE55-24N1F Ratings min. typ. 0.20 -55 20 3600 3000 5.5 5.1 Delivering Mode ...

Page 3

... Outlines i4-Pac IXYS reserves the right to change limits, conditions and dimensions. 2011 IXYS all rights reserved © Data according to IEC 60747and per diode unless otherwise specified DSEE55-24N1F Millimeter Inches Dim. min max min A 4.83 5.21 0.190 A1 2.59 3.00 0.102 A2 1.17 2.16 ...

Page 4

... I = 120 A F [ns] 240 220 200 0 200 400 600 800 -di /dt [A/µs] F Fig. 5 Typ. recovery time t versus -di / [s] Data according to IEC 60747and per diode unless otherwise specified DSEE55-24N1F 120 T = 125° 800 120 [ 200 400 600 -di /dt [A/µs] F Fig. 3 Typ. peak reverse current ...

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