DSEE55-24N1F IXYS, DSEE55-24N1F Datasheet - Page 3

• Manufacturer Part Number: DSEE55-24N1F
• Description: DIODE HFRED 2400V 55A I4-PAC
• Manufacturer: IXYS
• Series: HiPerFRED™r

Specifications of DSEE55-24N1F

• Voltage - Forward (vf) (max) @ If: 2.5V @ 40A
• Current - Reverse Leakage @ Vr: 1mA @ 2400V
• Current - Average Rectified (io) (per Diode): 55A
• Voltage - Dc Reverse (vr) (max): 2400V (2.4kV)
• Reverse Recovery Time (trr): 220ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Series Connection
• Mounting Type: Through Hole, Radial
• Package / Case: ISOPLUS i4-PAC™
• Vrrm, (v): 1200
• Ifavm, D = 0.5, Total, (a): 60
• Ifavm, D = 0.5, Per Diode, (a): 60
• @ Tc, (°c): 110
• Vf, Max, If=ifavm, (v): 1.56
• @ Tvjm, (°c): 150
• Trr, Typ, Tvj =25°c, (ns): 75
• Irm , Typ, Tvj =100°c, (a): 60
• @ -di/dt, (a/µs): 600
• Tvjm, (°c)_: 175
• Rthjc, Max, (k/w): 0.60
• Package Style: ISOPLUS i4-PAC™ (3 - Lead)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
©
Outlines i4-Pac
2011 IXYS all rights reserved
1
E
3
5
W
A2
A
A1
c
2x e
Data according to IEC 60747and per diode unless otherwise specified
E1
3x b
b4
2x b2
The convexbow of substrate is typ. < 0.05 mm over plastic
surface level ofdevice bottom side
Die konvexe Form des Substrates ist typ. < 0.05 mm über
der Kunststoffoberfläche der Bauteilunterseite
Dim.
A1
A2
D1
D2
D3
E1
b2
b4
L1
W
A
D
E
Q
R
b
c
e
L
20.80
14.99
20.30
19.56
16.76
19.81
4.83
2.59
1.17
1.14
1.47
2.54
0.51
1.65
2.11
5.33
2.54
min
DSEE55-24N1F
7.62 BSC
Millimeter
-
21.34
15.75
20.70
20.29
17.53
21.34
max
5.21
3.00
2.16
1.40
1.73
2.79
0.74
2.03
2.59
6.20
4.57
0.10
0.190
0.102
0.046
0.045
0.058
0.100
0.020
0.819
0.590
0.065
0.799
0.770
0.660
0.780
0.083
0.210
0.100
min
0.300 BSC
-
Inches
0.205
0.118
0.085
0.055
0.068
0.110
0.029
0.840
0.620
0.080
0.815
0.799
0.690
0.840
0.102
0.244
0.180
0.004
max
20110215a