STPS120M STMicroelectronics, STPS120M Datasheet

DIODE SCHOTTKY 1A 20V STMITE

STPS120M

Manufacturer Part Number
STPS120M
Description
DIODE SCHOTTKY 1A 20V STMITE
Manufacturer
STMicroelectronics
Datasheet

Specifications of STPS120M

Voltage - Forward (vf) (max) @ If
490mV @ 1A
Voltage - Dc Reverse (vr) (max)
20V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
3.9µA @ 20V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-216AA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Other names
497-6573-2
STPS120M

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Table 1: Main Product Characteristics
FEATURES AND BENEFITS
DESCRIPTION
Single Schottky rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.
Packaged in STmite, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection applications. Due
to the small size of the package this device fits
battery powered equipment (cellular, notebook,
PDA’s, printers) as well chargers and PCMCIA
cards.
Table 3: Absolute Ratings (limiting values)
September 2004
* :
Symbol
I
V
F(RMS)
I
P
dV/dt
I
dPtot
---------------
Very small conduction losses
Negligible switching losses
Extremely fast switching
Low forward voltage drop for higher efficiency
and extented battery life
Low thermal resistance
Avalanche capability specified
F(AV)
T
FSM
RRM
ARM
dTj
T
stg
j
>
V
T
------------------------- -
Rth j a
V
j
F
I
F(AV)
(max)
(max)
Repetitive peak reverse voltage
RMS forward voltage
Average forward current
Surge non repetitive forward current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage (rated V
RRM
®
(
1
)
thermal runaway condition for a diode on its own heatsink
0.41 V
150°C
20 V
1 A
Parameter
POWER SCHOTTKY RECTIFIER
REV. 3
T
tp = 8.3 ms sinusoidal
tp = 1µs Tj = 25°C
c
Table 2: Order Code
= 140°C δ = 0.5
R
, T
Part Number
j
STPS120M
= 25°C)
C
(DO216-AA)
STmite
STPS120M
-65 to + 150
10000
Value
1400
150
20
50
Marking
2
1
A
120
Unit
V/µs
°C
°C
W
V
A
A
A
1/6

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STPS120M Summary of contents

Page 1

... Rth j a – September 2004 POWER SCHOTTKY RECTIFIER 150°C 0.41 V Table 2: Order Code Part Number STPS120M Parameter = 140°C δ 8.3 ms sinusoidal tp = 1µ 25° 25° REV. 3 STPS120M A C STmite (DO216-AA) Marking 120 Value Unit 1400 W - 150 °C 150 °C 10000 V/µ ...

Page 2

... STPS120M Table 4: Thermal Resistance Symbol R * Junction to case th(j- Junction to ambient th(j-l) * Mounted with minimum recommended pad size, PC board FR4. Table 5: Static Electrical Characteristics Symbol Parameter I * Reverse leakage current Forward voltage drop F δ Pulse test 380 µs, < evaluate the conduction losses use the following equation 0. ...

Page 3

... Figure 8: Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 100 Normalized avalanche (t ) ARM p (25°C) T (° 100 6: Relative variation /R th(j-c) t (s) p 1.E-03 1.E- STPS120M power 125 150 of thermal T δ =tp/T tp 1.E-01 F=1MHz V =30mV OSC RMS T =25°C j 100 3/6 ...

Page 4

... STPS120M Figure 9: Forward voltage drop versus forward current (low level) I (A) FM 2.0 1.8 1.6 T =100°C j 1.4 (maximum values) 1.2 1.0 T =100°C j (typical values) 0.8 0.6 0.4 0.2 0.0 0.0 0.1 0.2 0.3 Figure 11: Thermal resistance junction to ambient versus copper surface under tab (epoxy printed board FR4 35µ ...

Page 5

... R R1 1.38 0.75 Package 120 STmite 2A Last update. STmite package dimensions reference A1 change: from 3 blank (min) to -0.05mm and from 0.10 (max) to 0.05mm. STPS120M DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. Max. 0.85 1.00 1.15 0.033 0.039 0.045 -0.05 0.05 -0.002 ...

Page 6

... STPS120M Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

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