STPS120M STMicroelectronics, STPS120M Datasheet - Page 3

• Manufacturer Part Number: STPS120M
• Description: DIODE SCHOTTKY 1A 20V STMITE
• Manufacturer: STMicroelectronics

Specifications of STPS120M

• Voltage - Forward (vf) (max) @ If: 490mV @ 1A
• Voltage - Dc Reverse (vr) (max): 20V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 3.9µA @ 20V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 497-6573-2; STPS120M

Figure
derating versus pulse duration
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
1.E+01
1.E+00
0.001
22
20
18
16
14
12
10
1.E-01
1.E-02
1.E-03
1.E-04
1.E-03
0.01
8
6
4
2
0
0.1
I (A)
1
0.01
M
I
M
P
P
0
ARM
I (mA)
R
ARM p
δ
(1µs)
=0.5
t
(t )
2
3:
0.1
4
Normalized
1.E-02
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
j
j
j
j
j
j
6
1
8
t (µs)
p
t(s)
V (V)
R
10
avalanche
10
1.E-01
12
14
100
16
T =125°C
T =25°C
T =75°C
C
C
power
C
18
1.E+00
1000
20
Figure
derating versus junction temperature
Figure
impedance junction to ambient versus pulse
duration
Figure 8: Junction capacitance versus reverse
voltage applied (typical values)
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
0.8
0.6
0.4
0.2
100
1.E-04
10
1
0
25
Z
Single pulse
1
P
δ = 0.5
δ = 0.2
δ = 0.1
C(pF)
th(j-c)
ARM
P
ARM p
/R
(25°C)
6:
(t )
4:
th(j-c)
50
Relative
Normalized
1.E-03
75
t (s)
T (°C)
p
V (V)
j
variation
R
10
100
avalanche
1.E-02
STPS120M
of
δ
=tp/T
125
V
OSC
F=1MHz
T =25°C
=30mV
j
thermal
T
power
RMS
tp
1.E-01
150
100
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