STPS1L30M STMicroelectronics, STPS1L30M Datasheet - Page 3

• Manufacturer Part Number: STPS1L30M
• Description: DIODE SCHOTTKY LDO 1A 30V STMITE
• Manufacturer: STMicroelectronics

Specifications of STPS1L30M

• Voltage - Forward (vf) (max) @ If: 390mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 390µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 497-8025-2; STPS1L30M

Figure
derating versus pulse duration
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values)
Figure 7: Reverse leakage current versus
reverse voltage applied (typical values)
0.001
1.E+03
1.E+02
1.E+01
1.E+00
22
20
18
16
14
12
10
1.E-01
1.E-02
0.01
1.E-03
8
6
4
2
0
0.1
1
0.01
I (A)
M
I
P
M
P
0
ARM
I (mA)
R
ARM p
2
δ
(1µs)
=0.5
t
(t )
3:
4
0.1
6
Normalized
1.E-02
8
10
1
12
t (µs)
p
t(s)
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
V (V)
14
j
j
j
j
j
j
R
16
avalanche
10
1.E-01
18
20
22
100
24
T =125°C
T =25°C
T =75°C
C
26
C
C
power
1.E+00
28
1000
30
Figure
derating versus junction temperature
Figure
impedance junction to ambient versus pulse
duration
Figure 8: Reverse leakage current versus
junction temperature (typical values)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E+03
1.E+02
1.E+01
1.E+00
1.2
0.8
0.6
0.4
0.2
1.E-01
1.E-02
1.E-04
1
0
Z
25
δ = 0.5
δ = 0.2
Single pulse
P
δ = 0.1
th(j-c)
ARM
P
0
I (mA)
R
ARM p
V =30V
/R
R
(25°C)
6:
(t )
4:
th(j-c)
25
50
Relative
Normalized
1.E-03
50
75
t (s)
T (°C)
T (°C)
p
j
j
variation
75
100
avalanche
1.E-02
100
STPS1L30M
of
δ
125
=tp/T
125
thermal
T
power
tp
1.E-01
150
150
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