STPS1L30M STMicroelectronics, STPS1L30M Datasheet - Page 4

• Manufacturer Part Number: STPS1L30M
• Description: DIODE SCHOTTKY LDO 1A 30V STMITE
• Manufacturer: STMicroelectronics

Specifications of STPS1L30M

• Voltage - Forward (vf) (max) @ If: 390mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 390µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Other names: 497-8025-2; STPS1L30M

STPS1L30M
Figure 9: Junction capacitance versus reverse
voltage applied (typical values)
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(epoxy printed board FR4, Cu = 35µm, typical
values)
4/6
1000
250
200
150
100
100
50
10
0
0
R
1
C(pF)
th(j-a)
20
(°C/W)
40
60
80
S(mm²)
V (V)
100
R
10
120
140
160
V
OSC
F=1MHz
T =25°C
=30mV
j
180
RMS
100
200
Figure 10: Forward voltage drop versus
forward current
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.00
I
FM
V
(A)
FM
0.05
(V)
0.10
0.15
(typical values)
0.20
T =85°C
j
(maximum values)
0.25
T =85°C
j
0.30
0.35
(maximum values)
0.40
T =25°C
j
0.45
0.50