STPS160U STMicroelectronics, STPS160U Datasheet - Page 2
![DIODE SCHOTTKY 1A 60V SMB](/photos/5/36/53650/497-do-214aa_sml.jpg)
STPS160U
Manufacturer Part Number
STPS160U
Description
DIODE SCHOTTKY 1A 60V SMB
Manufacturer
STMicroelectronics
Datasheet
1.STPS160U.pdf
(9 pages)
Specifications of STPS160U
Voltage - Forward (vf) (max) @ If
670mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
4µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
75 A
Configuration
Single
Forward Voltage Drop
0.8 V at 2 A
Maximum Reverse Leakage Current
4 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7547-2
STPS160U
STPS160U
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS160U
Manufacturer:
ST
Quantity:
50 000
Part Number:
STPS160U
Manufacturer:
VISHAY/威世
Quantity:
20 000
Characteristics
1
2/9
Characteristics
Table 2.
1.
Table 3.
Table 4.
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.49 x I
Symbol
Symbol
Symbol
V
R
P
dV/dt
I
I
V
I
I
F(AV)
I
T
RRM
RSM
FSM
R
RRM
ARM
th(j-l)
F
T
stg
dPtot
(1)
(2)
dTj
j
<
Repetitive peak reverse voltage
Average forward current
Surge non repetitive forward current t
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
Critical rate of rise of reverse voltage
Junction to lead
Reverse leakage current
Forward voltage drop
Rth(j-a)
F(AV)
1
Absolute ratings (limiting values)
Thermal resistance
Static electrical characteristics
Parameter
+ 0.08 I
condition to avoid thermal runaway for a diode on its own heatsink
F
2
(RMS)
Doc ID 4608 Rev 9
T
T
T
T
T
T
Parameter
Parameter
j
j
j
j
j
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
Test conditions
T
t
t
t
p
p
p
p
L
V
I
I
=10 ms sinusoidal
= 2 µs F = 1 kHz square
= 100 µs square
= 1 µs T
F
F
= 130 °C
(1)
R
= 1 A
= 2 A
= V
RRM
j
= 25 °C
δ = 0.5
SMA
SMB
Min.
Typ.
0.49
0.58
1.1
- 65 to + 150
10000
Value
Value
2400
150
60
75
30
23
1
1
1
Max.
0.67
0.57
0.65
0.8
4
4
STPS160
°C/W
V/µs
Unit
Unit
Unit
mA
µA
°C
°C
W
V
A
A
A
A
V