STPS160U STMicroelectronics, STPS160U Datasheet - Page 3
![DIODE SCHOTTKY 1A 60V SMB](/photos/5/36/53650/497-do-214aa_sml.jpg)
STPS160U
Manufacturer Part Number
STPS160U
Description
DIODE SCHOTTKY 1A 60V SMB
Manufacturer
STMicroelectronics
Datasheet
1.STPS160U.pdf
(9 pages)
Specifications of STPS160U
Voltage - Forward (vf) (max) @ If
670mV @ 1A
Voltage - Dc Reverse (vr) (max)
60V
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
4µA @ 60V
Diode Type
Schottky
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Schottky Rectifiers
Peak Reverse Voltage
60 V
Forward Continuous Current
1 A
Max Surge Current
75 A
Configuration
Single
Forward Voltage Drop
0.8 V at 2 A
Maximum Reverse Leakage Current
4 uA
Operating Temperature Range
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-7547-2
STPS160U
STPS160U
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STPS160U
Manufacturer:
ST
Quantity:
50 000
Part Number:
STPS160U
Manufacturer:
VISHAY/威世
Quantity:
20 000
STPS160
Figure 1.
Figure 3.
Figure 5.
0.001
8
7
6
5
4
3
2
0
0.7
0.6
0.5
0.4
0.3
0.2
0.0
0.1
0.01
1
0.1
1E-3
0.0
1
0.01
I (A)
M
P
P
F(AV)
P
I
ARM
M
ARM p
(W)
(1µs)
(t )
δ
=0.5
t
0.2
Average forward power dissipation
versus average forward current
Normalized avalanche power
derating versus pulse duration
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMA)
0.1
δ = 0.05
1E-2
0.4
1
δ = 0.1
I
F(AV)
t (µs)
p
t(s)
0.6
(A)
δ = 0.2
10
1E-1
0.8
δ = 0.5
100
δ
=tp/T
1.0
δ = 1
T =100°C
T =25°C
T
T =50°C
a
Doc ID 4608 Rev 9
a
a
tp
1E+0
1000
1.2
Figure 2.
Figure 4.
Figure 6.
1.0
0.8
0.6
0.4
0.0
8
7
6
5
4
3
0
1.2
0.2
2
1.2
0.8
0.6
0.4
0.2
1
1E-3
1
0
I (A)
0
M
I
25
F(AV)
P
I
P
ARM
M
δ
ARM p
=tp/T
(A)
(25°C)
δ
(t )
=0.5
t
25
T
Average forward current versus
ambient temperature (δ = 0.5)
Normalized avalanche power
derating versus junction
temperature
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMB)
50
tp
1E-2
50
SMA
R
S
75
(CU)
th(j-a)
T
=1.5cm
=100°C/W
amb
T (°C)
t(s)
75
j
2
(°C)
SMB
R
S
th(j-a)
(CU)
100
=1.5cm
=80°C/W
1E-1
100
2
Characteristics
R
th(j-a)
=R
125
th(j-I)
125
T =100°C
T =25°C
T =50°C
a
a
a
1E+0
150
150
3/9