BAS32L,135 NXP Semiconductors, BAS32L,135 Datasheet - Page 6

DIODE SW 75V 200MA H-S SOD80C

BAS32L,135

Manufacturer Part Number
BAS32L,135
Description
DIODE SW 75V 200MA H-S SOD80C
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS32L,135

Package / Case
LL-34, LLDS, MiniMELF, SOD80C
Voltage - Forward (vf) (max) @ If
1V @ 100mA
Voltage - Dc Reverse (vr) (max)
75V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
5µA @ 75V
Diode Type
Standard
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
4ns
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
100 V
Forward Continuous Current
0.2 A
Max Surge Current
4 A
Configuration
Single
Recovery Time
4 ns
Forward Voltage Drop
1 V
Maximum Reverse Leakage Current
5 uA
Operating Temperature Range
+ 200 C
Maximum Operating Temperature
+ 200 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933913910135
BAS32L /T3
BAS32L /T3
NXP Semiconductors
9. Package outline
10. Packing information
BAS32L
Product data sheet
Table 8.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package
BAS32L
Fig 8.
For further information and the availability of packing methods, see
Package outline SOD80C
Packing methods
SOD80C
All information provided in this document is subject to legal disclaimers.
Dimensions in mm
Rev. 7 — 20 January 2011
0.3
Description
4 mm pitch, 8 mm tape and reel
3.7
3.3
0.3
Section
High-speed switching diode
1.60
1.45
[1]
06-03-16
14.
Packing quantity
2500
-115
© NXP B.V. 2011. All rights reserved.
BAS32L
10000
-135
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