BAV20,113 NXP Semiconductors, BAV20,113 Datasheet - Page 7
![DIODE SW G-P 200V 150V DO-35](/photos/5/24/52490/568-do-35_sod27_sml.jpg)
BAV20,113
Manufacturer Part Number
BAV20,113
Description
DIODE SW G-P 200V 150V DO-35
Manufacturer
NXP Semiconductors
Datasheet
1.BAV20133.pdf
(10 pages)
Specifications of BAV20,113
Package / Case
DO-204AH, DO-35, Axial
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
150V
Current - Average Rectified (io)
250mA (DC)
Current - Reverse Leakage @ Vr
100nA @ 150V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Capacitance @ Vr, F
5pF @ 0V, 1MHz
Mounting Type
Through Hole
Product
General Purpose Diodes
Peak Reverse Voltage
200 V
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Configuration
Single
Recovery Time
50 ns
Forward Voltage Drop
1.25 V
Maximum Reverse Leakage Current
0.1 uA
Operating Temperature Range
+ 175 C
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
933189200113
BAV20 T/R
BAV20 T/R
BAV20 T/R
BAV20 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAV20,113
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
Product data sheet
General purpose diodes
BAV20; BAV21
handbook, full pagewidth
t r
t p
t
D.U.T.
10%
I F
I F
Ω
t rr
R = 50
S
SAMPLING
t
OSCILLOSCOPE
Ω
R = 50
V = V
I x R
R
F
S
i
(1)
90%
V R
MGA881
input signal
output signal
(1) I
= 3 mA.
R
Fig.8 Reverse recovery voltage test circuit and waveforms.
1999 May 25
7