BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 2

DIODE GP 250V 250MA SOD323

BAS321,115

Manufacturer Part Number
BAS321,115
Description
DIODE GP 250V 250MA SOD323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BAS321,115

Package / Case
SC-76, SOD-323, UMD2
Mounting Type
Surface Mount
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Current - Reverse Leakage @ Vr
100nA @ 200V
Voltage - Forward (vf) (max) @ If
1.25V @ 200mA
Voltage - Dc Reverse (vr) (max)
200V
Capacitance @ Vr, F
2pF @ 0V, 1MHz
Current - Average Rectified (io)
250mA (DC)
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
250 V
Forward Voltage Drop
1.25 V
Recovery Time
50 ns
Forward Continuous Current
0.25 A
Max Surge Current
9 A
Reverse Current Ir
0.1 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055352115::BAS321 T/R::BAS321 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS321,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on an FR4 printed circuit-board.
2004 Jan 26
V
V
I
I
I
P
T
T
F
FRM
FSM
NUMBER
SYMBOL
circuits.
stg
j
RRM
R
tot
General purpose diode
BAS321
TYPE
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current square wave; T
total power dissipation
storage temperature
junction temperature
NAME
PARAMETER
plastic surface mounted package; 2 leads
see Fig.2; note 1
t
surge; see Fig.4
T
p
amb
< 0.5 ms; δ ≤ 0.25
t = 1 µs
t = 100 µs
t = 10 ms
= 25 °C; note 1
DESCRIPTION
2
PACKAGE
PINNING
handbook, halfpage
CONDITIONS
Marking code: A7
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD323) and symbol.
j
= 25 °C prior to
1
PIN
1
2
−65
cathode
anode
MIN.
2
DESCRIPTION
Product data sheet
MAM406
250
200
250
625
9
3
1.7
300
+150
150
MAX.
BAS321
VERSION
SOD323
V
V
mA
mA
A
A
A
mW
°C
°C
UNIT

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