BAS321,115 NXP Semiconductors, BAS321,115 Datasheet - Page 5

• Manufacturer Part Number: BAS321,115
• Description: DIODE GP 250V 250MA SOD323
• Manufacturer: NXP Semiconductors

Specifications of BAS321,115

• Package / Case: SC-76, SOD-323, UMD2
• Mounting Type: Surface Mount
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 100nA @ 200V
• Voltage - Forward (vf) (max) @ If: 1.25V @ 200mA
• Voltage - Dc Reverse (vr) (max): 200V
• Capacitance @ Vr, F: 2pF @ 0V, 1MHz
• Current - Average Rectified (io): 250mA (DC)
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 250 V
• Forward Voltage Drop: 1.25 V
• Recovery Time: 50 ns
• Forward Continuous Current: 0.25 A
• Max Surge Current: 9 A
• Reverse Current Ir: 0.1 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055352115::BAS321 T/R::BAS321 T/R

NXP Semiconductors
2004 Jan 26
handbook, halfpage
handbook, halfpage
General purpose diode
(1) V
(2) V
Fig.5
(µA)
10
10
V R
(V)
300
200
100
I R
10
Fig.7
10
R
R
0
1
2
1
2
= V
= V
0
0
Reverse current as a function of junction
temperature.
Rmax
Rmax
Maximum permissible continuous
reverse voltage as a function of the
ambient temperature.
; maximum values.
; typical values.
50
(1)
100
100
(2)
T j (
150
o
C)
T amb (°C)
MBG381
MBK926
200
200
5
handbook, halfpage
f = 1 MHz; T
Fig.6
(pF)
C d
1.0
0.8
0.6
0.4
0.2
0
Diode capacitance as a function of reverse
voltage; typical values.
j
= 25 °C.
2
4
6
Product data sheet
V R (V)
BAS321
MBG447
8