BAT54T,115 NXP Semiconductors, BAT54T,115 Datasheet - Page 2
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BAT54T,115
Manufacturer Part Number
BAT54T,115
Description
DIODE SCHOTTKY 200MA SOT416 SC75
Manufacturer
NXP Semiconductors
Datasheet
1.BAT54T115.pdf
(9 pages)
Specifications of BAT54T,115
Voltage - Forward (vf) (max) @ If
800mV @ 100mA
Voltage - Dc Reverse (vr) (max)
30V
Current - Average Rectified (io)
200mA (DC)
Current - Reverse Leakage @ Vr
2µA @ 25V
Diode Type
Schottky
Speed
Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr)
5ns
Capacitance @ Vr, F
10pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
EMT3 (SOT-416, SC-75-3)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934063958115
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
BAT54T_1
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Pin
1
2
3
Type number Package
BAT54T
Type number
BAT54T
Symbol
V
I
I
I
P
T
T
T
F
FRM
FSM
j
amb
stg
R
tot
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Parameter
reverse voltage
forward current
repetitive peak forward
current
non-repetitive peak
forward current
total power dissipation
junction temperature
ambient temperature
storage temperature
Pinning
Ordering information
Marking codes
Limiting values
Description
anode
not connected
cathode
Name
SC-75
Rev. 01 — 14 December 2009
Description
plastic surface-mounted package; 3 leads
Conditions
t
square wave
t
t
t
T
p
p
p
p
amb
≤ 1 s; δ ≤ 0.5
= 100 μs
= 1 ms
= 10 ms
≤ 25 °C
Marking code
ZW
Simplified outline
1
Single Schottky barrier diode
[1]
3
Min
-
-
-
-
-
-
-
-
−55
−65
2
Graphic symbol
© NXP B.V. 2009. All rights reserved.
1
Max
30
200
300
4
2
1
150
150
+150
+150
BAT54T
Version
SOT416
3
006aaa436
Unit
V
mA
mA
A
A
A
mW
°C
°C
°C
n.c.
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