BAT54T,115 NXP Semiconductors, BAT54T,115 Datasheet - Page 5

• Manufacturer Part Number: BAT54T,115
• Description: DIODE SCHOTTKY 200MA SOT416 SC75
• Manufacturer: NXP Semiconductors

Specifications of BAT54T,115

• Voltage - Forward (vf) (max) @ If: 800mV @ 100mA
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 200mA (DC)
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Diode Type: Schottky
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: EMT3 (SOT-416, SC-75-3)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934063958115

NXP Semiconductors
8. Test information
9. Package outline
BAT54T_1
Product data sheet
Fig 4.
(1) I
V = V
R
S
Reverse recovery time test circuit and waveforms
R
R
= 50
+ I
= 1mA
F
Ω
×
R
S
Fig 5.
I
F
D.U.T.
Package outline SOT416 (SC-75)
OSCILLOSCOPE
mga881
SAMPLING
R
i
1.75
1.45
= 50
Rev. 01 — 14 December 2009
Dimensions in mm
0.9
0.7
Ω
V
1
R
t
10 %
r
1.8
1.4
1
90 %
input signal
3
t
p
2
0.30
0.15
0.45
0.15
Single Schottky barrier diode
t
0.95
0.60
0.25
0.10
+ I
04-11-04
F
output signal
© NXP B.V. 2009. All rights reserved.
BAT54T
t rr
(1)
t
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