PMEG3010BEV,115 NXP Semiconductors, PMEG3010BEV,115 Datasheet - Page 11

• Manufacturer Part Number: PMEG3010BEV,115
• Description: SCHOTTKY RECT 30V 1A SOT666
• Manufacturer: NXP Semiconductors

Specifications of PMEG3010BEV,115

• Package / Case: SS Mini-6 (SOT-666)
• Voltage - Forward (vf) (max) @ If: 560mV @ 1A
• Voltage - Dc Reverse (vr) (max): 30V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 150µA @ 30V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 70pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 30 V
• Forward Continuous Current: 1 A
• Max Surge Current: 10 A
• Configuration: Single
• Forward Voltage Drop: 0.56 V
• Maximum Reverse Leakage Current: 150 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934058329115; PMEG3010BEV T/R; PMEG3010BEV T/R

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NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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R76/04/pp11
Date of release: 2004 Jun 14
Document order number: 9397 750 13234