PMEG6010ER,115 NXP Semiconductors, PMEG6010ER,115 Datasheet - Page 3

• Manufacturer Part Number: PMEG6010ER,115
• Description: SCHOTTKY RECT 60V 10A SOD128
• Manufacturer: NXP Semiconductors

Specifications of PMEG6010ER,115

• Package / Case: SOD-128 Flat Leads
• Voltage - Forward (vf) (max) @ If: 530mV @ 1A
• Voltage - Dc Reverse (vr) (max): 60V
• Current - Average Rectified (io): 1A (DC)
• Current - Reverse Leakage @ Vr: 60µA @ 60V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Capacitance @ Vr, F: 120pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Product: Schottky Diodes
• Peak Reverse Voltage: 60 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.53 V
• Maximum Reverse Leakage Current: 60 uA
• Operating Temperature Range: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061463115

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Table of Contents
Support tools
Diodes
Protection and signal conditioning
Small-signal transistors
Schottky barrier diodes and rectifiers
PN rectifiers
Zener diodes
Switching diodes
Standard ESD protection devices
Low capacitance ESD protection devices
ESD protection for very high speed interfaces (< 2 pF)
Application specific ESD and ESD/EMI solutions
TVS diodes
General purpose bipolar transistors
Resistor-equipped transistors (RETs)
General purpose Schottky diodes ≤ 250 mA
Medium power low V
Medium power low V
Nomenclature of low V
Improved forward characteristics of (MEGA) Schottky rectifiers in new packages
Low capacitance Schottky diodes
PN rectifiers in SMA, SMB, SMC
General purpose Zener diodes
Zener diodes specification
General purpose switching diodes ≤ 100 V
General purpose switching diodes > 100 V
Controlled avalanche switching diodes
Low leakage current switching diodes
Audio interfaces
Video interfaces
Multichannel EMI filter, ESD protection for LCD and camera
SD-, SIM-card and MMC
Battery and charger protection
USB, LVDS, SATA, LAN
Automotive LIN/CAN/FlexRay
TVS diodes, 24 W / 40 W
TVS diodes, 400 W
TVS diodes, 600 W
Single transistors
Double transistors
Single and double switching transistors
Matched pair transistors
High voltage transistors
Low noise transistors
Darlington transistors
Medium frequency transistors
Schmitt trigger
MOSFET driver
RETs 100 mA single
RETs 100 mA double
RETs 500 mA
Low V
CEsat
(BISS) RETs
F
F
Schottky rectifiers single ≥ 200 mA
Schottky rectifiers dual ≥ 200 mA
F
(MEGA) Schottky rectifiers
23
47
15
16
18
24
26
29
32
44
48
54
6
7
10
12
13
13
14
15
16
17
18
20
21
21
32
33
36
38
38
39
43
44
44
45
48
49
49
50
51
51
51
52
52
53
54
55
55
55
8
8
Standard linear products
MOSFETs
Packages
Index
Low V
Medium power transistors
Adjustable shunt voltage regulator IC
Low-dropout adjustable and fixed linear voltage regulator
Discrete voltage regulator
Constant current source
Small-signal MOSFETs
Power MOSFETs
Package cross reference
Packing methods
Minimized outline drawings and reflow soldering footprint
Package overview
Low V
Low V
Low V
Low V
High voltage low V
Low V
Low V
Advantages of low V
Medium power low V
Medium power low V
Medium power general purpose transistors
Small-signal MOSFETs single (N-channel) < 50 V
Small-signal MOSFETs single (N-channel) ≥ 50 V
Small-signal MOSFETs dual (N-channel)
Small-signal MOSFETs single (P-channel)
Small-signal MOSFETs dual (P-channel) and FET-KYs
Power MOSFETs single (N-channel)
Power MOSFETs single (P-channel)
Power MOSFETs dual (N- and P-channel)
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
CEsat
(BISS) transistors
(BISS) transistors single NPN
(BISS) transistors single PNP
(BISS) transistors double
(BISS) load switches
modules - Schottky diode / (BISS) transistor
(BISS) RETs
CEsat
CEsat
CEsat
CEsat
(BISS) transistors
(BISS) technology
(BISS) transistors NPN
(BISS) transistors PNP
108
67
71
87
107
56
64
68
69
69
70
72
78
88
90
96
56
58
60
61
62
62
63
63
64
65
65
72
74
76
76
76
78
84
85
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