BYV25D-600,118 NXP Semiconductors, BYV25D-600,118 Datasheet - Page 3

• Manufacturer Part Number: BYV25D-600,118
• Description: DIODE RECT 600V 5A D-PAK
• Manufacturer: NXP Semiconductors

Specifications of BYV25D-600,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Voltage - Forward (vf) (max) @ If: 1.3V @ 5A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 5A
• Current - Reverse Leakage @ Vr: 50µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 60ns
• Mounting Type: Surface Mount
• Product: Switching Diodes
• Peak Reverse Voltage: 600 V
• Forward Continuous Current: 5 A
• Max Surge Current: 66 A
• Configuration: Single
• Recovery Time: 60 ns
• Forward Voltage Drop: 1.3 V
• Maximum Reverse Leakage Current: 50 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 40 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934062054118

NXP Semiconductors
5. Thermal characteristics
Table 4.
[1]
BYV25D-600_1
Product data sheet
Symbol
R
R
Fig 1.
th(j-mb)
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
Transient thermal impedance from junction to mounting base as a function of pulse width
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to ambient in free air
Thermal characteristics
Z
(K/W)
th(j-mb)
10
10
10
10
1
1
2
3
10
6
10
5
Rev. 01 — 29 July 2008
10
4
Conditions
with heatsink compound;
see
10
3
Figure 1
10
P
2
10
t
p
T
1
003aac235
1
=
t
p
(s)
t
T
t
p
10
[1]
Min
-
-
BYV25D-600
Rectifier diode, ultrafast
Typ
-
50
© NXP B.V. 2008. All rights reserved.
Max
3.0
-
Unit
K/W
K/W
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