BYV25D-600,118 NXP Semiconductors, BYV25D-600,118 Datasheet - Page 5

DIODE RECT 600V 5A D-PAK

BYV25D-600,118

Manufacturer Part Number
BYV25D-600,118
Description
DIODE RECT 600V 5A D-PAK
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BYV25D-600,118

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Voltage - Forward (vf) (max) @ If
1.3V @ 5A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
5A
Current - Reverse Leakage @ Vr
50µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
60ns
Mounting Type
Surface Mount
Product
Switching Diodes
Peak Reverse Voltage
600 V
Forward Continuous Current
5 A
Max Surge Current
66 A
Configuration
Single
Recovery Time
60 ns
Forward Voltage Drop
1.3 V
Maximum Reverse Leakage Current
50 uA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934062054118
NXP Semiconductors
BYV25D-600_1
Product data sheet
Fig 3.
Fig 5.
I
I
R
F
P
(W)
tot
10
8
6
4
2
0
Reverse recovery definitions
I
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
0
F(AV)
dl
dt
F
= I
I
RM
0.1
F(RMS)
Q
2
r
0.2
t
rr
4
0.5
6
I
= 1
F(AV)
003aac233
(A)
001aab911
10 %
8
Rev. 01 — 29 July 2008
time
100 %
Fig 4.
Fig 6.
V
I
F
F
(W)
P
tot
8
6
4
2
0
Forward recovery definitions
a = form factor = I
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
0
4.0
2
2.8
F(RMS)
2.2
/ I
BYV25D-600
1.9
Rectifier diode, ultrafast
F(AV)
a = 1.57
4
I
© NXP B.V. 2008. All rights reserved.
F(AV)
003aac234
(A)
V
F
6
001aab912
time
time
V
5 of 9
FR

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