STPS1H100A STMicroelectronics, STPS1H100A Datasheet - Page 4

• Manufacturer Part Number: STPS1H100A
• Description: DIODE SCHOTTKY 100V 1A SMA
• Manufacturer: STMicroelectronics

Specifications of STPS1H100A

• Voltage - Forward (vf) (max) @ If: 770mV @ 1A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 4µA @ 100V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 100 V
• Forward Continuous Current: 1 A
• Max Surge Current: 50 A
• Configuration: Single
• Forward Voltage Drop: 0.86 V at 2 A
• Maximum Reverse Leakage Current: 4 uA
• Operating Temperature Range: + 175 C
• Mounting Style: SMD/SMT
• Rectifier Type: Schottky Diode
• Peak Rep Rev Volt: 100V
• Avg. Forward Curr (max): 1A
• Rev Curr: 4uA
• Peak Non-repetitive Surge Current (max): 50A
• Forward Voltage: 0.86V
• Operating Temp Range: -65C to 175C
• Package Type: SMA
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-3209-2

Characteristics
4/10
Figure 7.
Figure 9.
Figure 11. Reverse leakage current versus
1.E+03
1.E+02
1.E+01
1.E+00
1.00
0.10
0.01
1.E-03
6
5
4
3
2
1
0
1.E-01
1.E-02
1.E-03
1.E-03
I (A)
M
Z
I (µA)
R
SMAflat
th(j-a)
0
Single pulse
SMA
I
M
10
/R
1.E-02
Non repetitive surge peak forward
current versus overload duration
(maximum values) (SMAflat)
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMA)
reverse voltage applied
(typical values)
th(j-a)
δ
=0.5
t
20
1.E-02
1.E-01
30
40
t(s)
1.E+00
t (s)
p
T
T
j
=125 °C
j
=25 °C
50
1.E-01
60
1.E+01
70
V (V)
1.E+02
R
80
T
T
T
a
a
a
=110 °C
=25 °C
=75 °C
90
1.E+00
1.E+03
100
Figure 8.
Figure 10. Relative variation of thermal
Figure 12. Junction capacitance versus
1.00
0.10
0.01
1.00
0.10
0.01
100
10
1.E-03
1.E-03
1
C(pF)
Z
Z
SMAflat
th(j-a)
Single pulse
th(j-a)
Single pulse
SMB
/R
/R
1.E-02
1.E-02
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMB)
impedance junction to ambient
versus pulse duration (SMAflat)
reverse voltage applied
(typical values)
th(j-a)
th(j-a)
1.E-01
1.E-01
V (V)
1.E+00
1.E+00
R
t (s)
p
10
t (s)
p
1.E+01
1.E+01
1.E+02
1.E+02
V
OSC
STPS1H100
F=1 MHz
T
=30 mV
j
=25 °C
RMS
1.E+03
1.E+03
100