STPS3150 STMicroelectronics, STPS3150 Datasheet - Page 4

• Manufacturer Part Number: STPS3150
• Description: DIODE SCHOTTKY 3A 150V DO-201AD
• Manufacturer: STMicroelectronics

Specifications of STPS3150

• Voltage - Forward (vf) (max) @ If: 820mV @ 3A
• Voltage - Dc Reverse (vr) (max): 150V
• Current - Average Rectified (io): 3A
• Current - Reverse Leakage @ Vr: 2µA @ 150V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -

Characteristics
4/10
Figure 9.
Figure 11. Relative variation of thermal
Figure 13. Junction capacitance versus
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1000
100
1.E-04
1.E-02
10
Z
Z
1
th(j-a)
th(j-l)
C(pF)
Single pulse
SMB
Single pulse
SMB flat
/R
/R
th(j-l)
th(j-a)
1.E-03
1.E-01
Relative variation of thermal
impedance junction to ambient
versus pulse duration (SMB)
impedance junction to lead
versus pulse duration - SMB flat
reverse voltage applied (typical
values)
10
1.E+00
1.E-02
t (s)
t (s)
p
p
V (V)
R
1.E+01
1.E-01
100
1.E+02
1.E+00
δ
=tp/T
V
OSC
F=1MHz
T =25°C
=30mV
j
T
tp
RMS
1.E+03
1.E+01
1000
Figure 10. Relative variation of thermal
Figure 12. Reverse leakage current versus
Figure 14. Forward voltage drop versus
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
1.E-01
1.E-02
10
1.E-01
1
0.0
Z
I
FM
th(j-a)
DO-201AD
Single pulse
0
I (µA)
(A)
R
0.2
/R
th(j-a)
impedance junction to ambient
versus pulse duration (DO-2001AD)
reverse voltage applied (typical
values)
forward current
25
1.E+00
0.4
(typical values)
T =125°C
0.6
j
50
(maximum values)
T =125°C
0.8
j
1.E+01
t (s)
p
V (V)
V
T =150°C
T =125°C
T =100°C
T =75°C
T =50°C
T =25°C
R
FM
j
j
j
j
j
j
75
1.0
(V)
1.2
100
(maximum values)
1.E+02
T =25°C
j
δ
1.4
=tp/T
125
STPS3150
T
1.6
tp
1.E+03
150
1.8