STTH112U STMicroelectronics, STTH112U Datasheet

DIODE ULTRA FAST 1200V 1A SMB

STTH112U

Manufacturer Part Number
STTH112U
Description
DIODE ULTRA FAST 1200V 1A SMB
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH112U

Voltage - Forward (vf) (max) @ If
1.9V @ 1A
Voltage - Dc Reverse (vr) (max)
1200V (1.2kV)
Current - Average Rectified (io)
1A
Current - Reverse Leakage @ Vr
5µA @ 1200V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
1200 V
Forward Voltage Drop
1.9 V
Recovery Time
75 ns
Forward Continuous Current
1 A
Max Surge Current
18 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 50 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-2460-2

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Features
Description
The STTH112, which is using ST ultrafast high
voltage planar technology, is specially suited for
free-wheeling, clamping, snubbering,
demagnetization in power supplies and other
power switching applications
October 2009
Low forwarded voltage drop
High reliability
High surge current capability
Soft switching for reduced EMI disturbances
Planar technology
Doc ID 9343 Rev 5
Table 1.
High voltage ultrafast rectifier
STTH112A
SMA
Symbol
V
T
V
I
F (max)
j (max)
F(AV)
RRM
Device summary
STTH112
DO-41
STTH112U
STTH112
SMB
1200 V
1.65 V
175 °C
Value
1 A
www.st.com
1/8
8

Related parts for STTH112U

STTH112U Summary of contents

Page 1

... October 2009 High voltage ultrafast rectifier SMA STTH112A Table 1. Device summary Symbol I F(AV) V RRM T j (max (max) Doc ID 9343 Rev 5 STTH112 DO-41 STTH112 SMB STTH112U Value 1 A 1200 V 175 °C 1.65 V 1/8 www.st.com 8 ...

Page 2

Electrical characteristics 1 Electrical characteristics Absolute ratings (limiting values) Symbol V Repetitive peak reverse voltage RRM V Voltage rms (RMS) I Average forward current F(AV) I Forward surge current FSM T Storage temperature range stg T Maximum operating junction temperature ...

Page 3

STTH112 Figure 1. Conduction losses versus average current P(W) 2.2 δ = 0.2 δ = 0.1 2.0 δ = 0.05 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 I (A) F(AV) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 ...

Page 4

Electrical characteristics Figure 7. Thermal resistance junction to ambient versus copper surface under each lead (epoxy printed circuit board FR4, copper thickness: 35µm) (SMA) 140 130 120 110 100 4/8 R (°C/W) th(j- SMA ...

Page 5

STTH112 2 Package information ● Epoxy meets UL 94, V0 ● Band indicates cathode ● Bending method (DO-41): see Application note AN1471 In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending ...

Page 6

Package information Table 6. SMB dimensions Figure 9. Footprint (dimensions in mm) Table 7. DO-41 (plastic) dimensions C 6/8 Ref 1.62 2.60 1.62 5.84 ...

Page 7

... STTH112 3 Ordering information Table 8. Ordering information Order code STTH112 STTH112A STTH112U STTH112RL 4 Revision history Table 9. Document revision history Date Revision Jan-2003 22-Jun-2005 20-Mar-2007 30-Sep-2009 Marking Package STTH112 DO-41 H12 SMA U12 SMB STTH112 DO-41 2 Initial release. New value 150 °C added to table 2. ...

Page 8

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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