STTH112U STMicroelectronics, STTH112U Datasheet - Page 3

• Manufacturer Part Number: STTH112U
• Description: DIODE ULTRA FAST 1200V 1A SMB
• Manufacturer: STMicroelectronics

Specifications of STTH112U

• Voltage - Forward (vf) (max) @ If: 1.9V @ 1A
• Voltage - Dc Reverse (vr) (max): 1200V (1.2kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1200V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1200 V
• Forward Voltage Drop: 1.9 V
• Recovery Time: 75 ns
• Forward Continuous Current: 1 A
• Max Surge Current: 18 A
• Reverse Current Ir: 5 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-2460-2

STTH112
Figure 1.
Figure 3.
Figure 5.
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01
1.E-01
0.0
P(W)
Z
Z
δ = 0.5
δ = 0.5
Single pulse
Single pulse
th(j-c)
δ = 0.2
δ = 0.1
th(j-c)
δ = 0.2
δ = 0.1
epoxy FR4, L
0.1
/R
/R
0.2
th(j-c)
th(j-c)
Conduction losses versus average
current
Relative variation of thermal
impedance junction ambient versus
pulse duration (DO-41)
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4)(SMB)
1.E+00
1.E+00
leads
0.3
= 10mm
δ = 0.05
0.4
0.5
δ = 0.1
I
F(AV)
1.E+01
1.E+01
t (s)
t (s)
p
p
0.6
(A)
δ = 0.2
0.7
0.8
1.E+02
1.E+02
δ = 0.5
0.9
δ
δ
δ
=tp/T
=tp/T
=tp/T
1.0
T
T
δ = 1
T
Doc ID 9343 Rev 5
1.1
tp
tp
tp
1.E+03
1.E+03
1.2
Figure 2.
Figure 4.
Figure 6.
100.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
110
100
10.0
90
80
70
60
50
40
30
20
10
1.E-01
1.0
0.1
0
0
Z
R
0.0
δ = 0.5
δ = 0.2
Single pulse
th(j-c)
δ = 0.1
I
th(j-a)
FM
(A)
1
0.5
/R
(°C/W)
(typical values)
th(j-c)
T =125°C
Forward voltage drop versus
forward current
Relative variation of thermal
impedance junction ambient versus
pulse duration (epoxy FR4) (SMA)
Thermal resistance junction to
ambient versus copper surface
under each lead (DO-41, SMB)
j
2
1.E+00
1.0
epoxy printed circuit board FR4, copper thickness: 35µm
3
1.5
(maximum values)
T =125°C
j
2.0
4
SMB
1.E+01
S(cm²)
t (s)
V
Electrical characteristics
p
FM
2.5
5
(V)
(maximum values)
T =25°C
3.0
6
j
L
leads
DO-41
=10mm
1.E+02
3.5
7
δ
=tp/T
4.0
8
T
4.5
9
tp
1.E+03
5.0
10
3/8