STTH302S STMicroelectronics, STTH302S Datasheet
STTH302S
Specifications of STTH302S
STTH302S
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STTH302S Summary of contents
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... Negligible switching losses Low forward and reverse recovery times High junction temperature DESCRIPTION The STTH302S, which is using ST’s new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications ...
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... STTH302S STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test 5ms, < 380µs, < evaluate the maximum conduction losses use the following equation : 0. 0.05 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time tfr Forward recovery ...
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... Fig. 6: Reverse recovery time versus dI confidence). t (ns) RR 100 F=1MHz V =30mV 90 osc T =25° 100 1000 1 STTH302S R =R th(j-a) th(j-l) R =75°C/W th(j-a) S=1cm² T (°C) amb 100 125 Forward voltage drop versus forward T T =125°C =125° (Maximum values) (Maximum values) ...
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... STTH302S Fig. 7: Peak reverse recovery current versus dI /dt (90% confidence (A) RM 6 =100V R 5.0 4.0 T =125°C j 3.0 2.0 1.0 0 Fig. 9: Relative variations of dynamic parameters versus junction temperature [Tj [Tj = 25° 3 /dt=200A/µ =100V R 3.0 2.5 2.0 1.5 1 100 4/5 Fig. 8: Reverse recovery charges versus dI (90% confidence) ...
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... Weight Base qty Delivery mode 0.245 g 2500 Tape & reel STTH302S Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 5/5 ...