STTA806G STMicroelectronics, STTA806G Datasheet - Page 3

• Manufacturer Part Number: STTA806G
• Description: DIODE TURBO 8A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA806G

• Voltage - Forward (vf) (max) @ If: 1.75V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 52ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

Fig. 1: Conduction losses versus average current.
18
16
14
12
10
Fig. 3: Relative variation of thermal transient
impedance junction to case versus pulse duration.
Fig. 5: Reverse recovery time versus dI
200
180
160
140
120
100
8
6
4
2
0
80
60
40
20
0
0
P1(W)
0
trr(ns)
=tp/T
100 200 300 400 500 600 700 800 900 1000
IF=4A
1
dIF/dt(A/ s)
T
2
tp
IF=8A
3
90% CONFIDENCE Tj=125 C
4
= 0 .1
5
IF(av)(A)
IF=16A
= 0 . 5
6
VR=400V
= 0 . 2
F
/dt.
o
7
= 1
8
Fig. 2: Forward voltage drop versus forward
current.
3.00
2.75
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
Fig. 4: Peak reverse recovery current versus
dI
32.5
30.0
27.5
25.0
22.5
20.0
17.5
15.0
12.5
10.0
Fig. 6: Softness factor (tb/ta) versus dI
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
7.5
5.0
2.5
0.0
F
0
0.1
/dt.
S factor
VFM(V)
0
IRM(A)
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
90% CONFIDENCE Tj=125 C
VR=400V
MAXIMUM VALUES
Tj=125 C
1
dIF/dt(A/ s)
IF=16A
o
Typical values Tj=125 C
dIF/dt(A/ s)
IF=4A
o
STTA806D/DI/G
IFM(A)
10
IF=8A
IF<2xIF(av)
VR=400V
F
/dt.
o
100
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