STTA806G STMicroelectronics, STTA806G Datasheet - Page 6

• Manufacturer Part Number: STTA806G
• Description: DIODE TURBO 8A 600V D2PAK
• Manufacturer: STMicroelectronics
• Series: TURBOSWITCH™r

Specifications of STTA806G

• Voltage - Forward (vf) (max) @ If: 1.75V @ 8A
• Voltage - Dc Reverse (vr) (max): 600V
• Current - Average Rectified (io): 8A
• Current - Reverse Leakage @ Vr: 100µA @ 600V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 52ns
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -

STTA806D/DI/G
APPLICATION DATA (Cont’d)
Fig. B: STATIC CHARACTERISTICS
Fig. C: TURN-OFF CHARACTERISTICS
Fig. D: TURN-ON CHARACTERISTICS
6/9
1.1V F
V Fp
V
V
I
I
I F
V R
0
0
dI /dt
V F
F
I RM
dI /dt
trr = ta + tb
F
ta
I R
tb
I F
I
tfr
dI /dt
V tO
Rd
R
TRANSISTOR
DIODE
S = tb / ta
V F
I Fmax
IL
t
VR
V F
t
t
t
V
Conduction losses :
P1 = V
Reverse losses :
P2 = V
Turn-on losses :
(in the transistor, due to the diode)
Turn-off losses (in the diode) :
P3 and P5 are suitable for power MOSFET and
IGBT
Turn-on losses :
P4 = 0.4 (V
P5 =
t0
R
. I
. I
V
V
R
R
P3 =
F(AV)
FP
R
. (1 - )
- V
V
I
+ R
RM
F
R
I
) . I
RM
d
2
2
Fmax
. I
6
6
x dI
I
F
x dI
x dI
RM
I
2
(
L
(RMS)
F
3
2
. t
F
F
fr
(
dt
. F
S
S
dt
dt
2
2
S
F
)
)
F
F