STGP10NC60KD STMicroelectronics, STGP10NC60KD Datasheet - Page 5

• Manufacturer Part Number: STGP10NC60KD
• Description: IGBT N-CH 600V 20A TO-220
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGP10NC60KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 5A
• Current - Collector (ic) (max): 20A
• Power - Max: 65W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 20A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 60W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-5120-5

STGx10NC60KD
2
Electrical characteristics
(T
Table 4.
1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %
Table 5.
V
Symbol
Symbol
V
V
j
(BR)CES
g
CE(sat)
I
I
=25°C unless otherwise specified)
C
GE(th)
C
C
Q
Q
CES
GES
fs
Q
oes
res
ies
ge
gc
(1)
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
GE
Static
Dynamic
= 0)
= 0)
Parameter
Parameter
CE
= 0)
Doc ID 11423 Rev 6
I
V
V
V
V
V
V
V
V
V
V
V
(see Figure 19)
C
GE
GE
GE
CE
CE
CE
CE
GE
GE
= 1mA
CE
CE
= 15V, I
= 15V, I
= V
= 600 V
=600 V, T
= ±20V
= 15V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
Test conditions
Test conditions
GE
, I
,
I
C
C
C
C
= 5A
= 5A, T
= 250µA
= 5A
j
C
= 125°C
= 5A,
j
= 125°C
Electrical characteristics
Min.
600
Min.
4.5
-
-
Typ.
2.2
1.8
Typ. Max.
15
380
8.5
46
19
5
9
Max.
±100
150
2.5
6.5
1
-
-
Unit
Unit
mA
nC
nC
nC
pF
pF
pF
µA
nA
V
V
V
V
S
5/20