STGP10NC60KD STMicroelectronics, STGP10NC60KD Datasheet - Page 7
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STGP10NC60KD
Manufacturer Part Number
STGP10NC60KD
Description
IGBT N-CH 600V 20A TO-220
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Specifications of STGP10NC60KD
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 5A
Current - Collector (ic) (max)
20A
Power - Max
65W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
20A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
60W
Collector Emitter Voltage V(br)ceo
600V
Operating Temperature Range
-55°C To +150°C
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-5120-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STGP10NC60KD
Manufacturer:
SANDISK
Quantity:
3 400
Part Number:
STGP10NC60KD
Manufacturer:
ST/意法
Quantity:
20 000
STGx10NC60KD
Table 8.
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Forward on-voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Collector-emitter diode
Parameter
Doc ID 11423 Rev 6
I
I
I
di/dt=100 A/µs
(see
I
T
(see
F
F
F
F
j
=5 A
=5 A, T
=5 A, V
=5 A, V
=125 °C, di/dt=100 A/µs
Test conditions
Figure
Figure
j
R
R
=125 °C
=40 V,
=40 V,
5)
5)
Electrical characteristics
Min
-
-
-
Typ.
1.6
1.3
2.2
22
14
35
40
2
Max.
-
-
-
Unit
nC
nC
ns
ns
V
V
A
A
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