STGW20NC60VD STMicroelectronics, STGW20NC60VD Datasheet - Page 5

• Manufacturer Part Number: STGW20NC60VD
• Description: IGBT N-CHAN 60A 600V TO247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW20NC60VD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 60A
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (min): -55
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.5 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Continuous Collector Current At 25 C: 60 A
• Gate-emitter Leakage Current: +/- 100 nA
• Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 60 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 200W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-4357-5

STGW20NC60VD
Table 6.
Table 7.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
Symbol
(di/dt)
(di/dt)
Symbol
t
t
E
E
t
t
t
t
r(Voff)
r(Voff)
recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as
external diode. IGBTs & Diode are at the same temperature (25°C and 125°C).
d(on)
d(on)
d(off)
d(off)
E
E
on
on
E
E
t
t
t
t
r
r
f
f
off
off
ts
ts
(1)
(1)
onf
on
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
Doc ID 9983 Rev 5
V
R
(see Figure 19)
V
R
Tj= 125°C
(see Figure 19)
V
R
(see Figure 17)
V
R
T
V
R
(see Figure 17)
V
R
T
j
j
CC
CC
CC
CC
CC
CC
G
G
G
G
G
G
=125°C
=125°C
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=3.3 Ω, V
=390 V, I
=390 V, I
=390 V, I
=390 V, I
=390 V, I
=390 V, I
Test conditions
Test conditions
(see Figure 17)
(see Figure 17)
C
C
C
C
C
C
GE
GE
GE
GE
GE
GE
= 20 A,
= 20 A,
= 20 A,
= 20 A,
= 20 A,
= 20 A,
=15 V,
=15 V,
=15V
=15 V
=15 V
=15 V
Figure
Electrical characteristics
Min.
Min
-
-
-
-
-
-
19. Eon include diode
1220
1600
1500
Typ.
Typ.
11.5
220
330
550
450
770
100
150
130
31
11
31
28
75
66
Max.
Max
300
450
750
-
-
-
-
A/µs
A/µs
Unit
Unit
µJ
µJ
µJ
µJ
µJ
µJ
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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