STGW50NC60W STMicroelectronics, STGW50NC60W Datasheet - Page 4

• Manufacturer Part Number: STGW50NC60W
• Description: IGBT N-CH 600V 55A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW50NC60W

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 100A
• Power - Max: 285W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7016-5

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
V
Symbol
Symbol
V
V
CASE
BR(CES)
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
CES
GES
g
Q
oes
ies
res
fs
ge
gc
g
=25°C unless otherwise specified)
Collector-emitter
breakdown voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Static
Dynamic
GE
= 0)
Parameter
Parameter
CE
= 0)
V
V
V
V
Figure 16
I
V
V
V
V
V
V
C
GE
GE
CE
CE
GE
GE
CE
CE
CE
GE
CE
= 1mA, V
= V
= Max rating,T
= Max rating,T
= 15V, I
= 15V, I
= ±20V, V
= 25V, f = 1MHz,
= 0
= 390V, I
= 15V,
= 15V
Test conditions
Test conditions
GE
, I
,
GE
I
C
C
C
C
= 40A
=40A,Tc=125°C
C
= 250µA
=40A
CE
= 0
= 40A,
= 0
C
C
= 25°C
= 125°C
Min.
Min.
3.75
600
4700
Typ.
Typ.
410
195
2.1
1.9
90
32
82
25
STGW50NC60W
Max.
Max.
±100
5.75
500
2.6
5
Unit
Unit
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S