STGW50NC60W STMicroelectronics, STGW50NC60W Datasheet - Page 9

• Manufacturer Part Number: STGW50NC60W
• Description: IGBT N-CH 600V 55A TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW50NC60W

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.6V @ 15V, 40A
• Current - Collector (ic) (max): 100A
• Power - Max: 285W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 600 V
• Maximum Gate Emitter Voltage: +/- 20 V
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current Ic Max: 100 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-7016-5

STGW50NC60W
2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs.
maximum operating frequency curve is reported. That frequency is defined as follows:
f
●
Equation 1
P
considering ∆T = T
●
Equation 2
P
with 50% of duty cycle, V
●
Equation 3
P
●
MAX
D
C
SW
= ∆T / R
= I
The maximum power dissipation is limited by maximum junction to case thermal
resistance:
The conduction losses are:
Power dissipation during ON & OFF commutations is due to the switching frequency:
Typical values @ 125°C for switching losses are used (test conditions: V
= 15V, R
note 2), while the tail of the collector current is included in the E
note 3).
= (E
= (P
C
* V
ON
D
CE(SAT)
- P
THJ-C
+ E
G
C
= 10 Ohm). Furthermore, diode recovery energy is included in the E
) / (E
OFF
* δ
J
) * freq.
ON
- T
C
+ E
CESAT
= 125 °C- 75 °C = 50°C
OFF
)
typical value @125°C.
Electrical characteristics
OFF
measurements (see
CE
= 390V, V
ON
(see
9/14
GE