STGW30N90D STMicroelectronics, STGW30N90D Datasheet - Page 4

• Manufacturer Part Number: STGW30N90D
• Description: IGBT N-CH 30A 900V TO-247
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGW30N90D

• Voltage - Collector Emitter Breakdown (max): 900V
• Vce(on) (max) @ Vge, Ic: 2.75V @ 15V, 20A
• Current - Collector (ic) (max): 60A
• Power - Max: 220W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Other names: 497-7484-5; STGW30N90D

Electrical characteristics
2
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Electrical characteristics
(T
Table 4.
1. Pulse duration: 300 µs, duty cycle 1.5%
Table 5.
V
Symbol
Symbol
V
V
J
(BR)CES
g
CE(sat)
I
I
C
GE(th)
C
C
Q
Q
= 25 °C unless otherwise specified)
CES
GES
fs
Q
oes
ies
res
ge
gc
(1)
g
Collector-emitter
breakdown voltage
(V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector-emitter cut-off
current (V
Gate-emitter leakage
current (V
Forward transconductance V
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
Static electrical characteristics
Dynamic
= 0)
Parameter
Parameter
GE
CE
= 0)
= 0)
Doc ID 13766 Rev 2
I
V
V
V
V
V
V
V
V
I
C
C
GE
GE
CE
CE
CE
GE
CE
CE
CE
= 20 A,V
= 1 mA
= V
= 15 V, I
= 15 V, I
= 600 V
= 600 V, T
=± 20 V
= 25 V
= 25 V, f = 1 MHz, V
= 900 V,
GE
Test conditions
Test conditions
, I
GE
,
C
I
C
C
C
= 250µA
= 20 A
= 20 A, T
=15 V
= 20 A
J
=125 °C
J
=125 °C
GE
=0
Min.
Min.
3.75
900
-
-
2510
Typ.
Typ.
175
110
2.2
2.0
30
16
49
14
STGW30N90D
± 100
Max. Unit
Max. Unit
2.75
5.75
500
10
-
-
mA
nC
nC
nC
µA
nA
pF
pF
pF
V
V
V
V
S