STGW40NC60V STMicroelectronics, STGW40NC60V Datasheet

IGBT N-CHAN 80A 600V TO247

STGW40NC60V

Manufacturer Part Number
STGW40NC60V
Description
IGBT N-CHAN 80A 600V TO247
Manufacturer
STMicroelectronics
Series
PowerMESH™r
Datasheet

Specifications of STGW40NC60V

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.5V @ 15V, 40A
Current - Collector (ic) (max)
80A
Power - Max
260W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Type
IGBT
Dc Collector Current
80A
Collector Emitter Voltage Vces
2.5V
Power Dissipation Pd
260W
Collector Emitter Voltage V(br)ceo
600V
Transistor Case Style
TO-247
No. Of Pins
3
Svhc
No
Rohs Compliant
Yes
Operating Temperature Range
-55°C To +150°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
497-4358-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STGW40NC60V
Manufacturer:
ST
Quantity:
12 500
July 2004
Table 1: General Features
DESCRIPTION
Using the latest high voltage technology based on
a patented strip layout, STMicroelectronics has
designed an advanced family of IGBTs, the Pow-
erMESH
The suffix “V” identifies a family optimized for high
frequency.
APPLICATIONS
Table 2: Order Codes
STGW40NC60V
HIGH CURRENT CAPABILITY
HIGH FREQUENCY OPERATION UP TO
50 KHz
LOSSES INCLUDE DIODE RECOVERY
ENERGY
OFF LOSSES INCLUDE TAIL CURRENT
LOWER C
NEW GENERATION PRODUCTS WITH
TIGHTER PARAMETER DISTRUBUTION
HIGH FREQUENCY INVERTERS
SMPS and PFC IN BOTH HARD SWITCH AND
RESONANT TOPOLOGIES
UPS
MOTOR DRIVERS
STGW40NC60V
TYPE
SALES TYPE
IGBTs, with outstanding performances.
RES
/ C
600 V
V
IES
CES
RATIO
V
CE(sat)
@25°C
< 2.5 V
GW40NC60V
MARKING
(Max)
@100°C
50 A
I
C
N-CHANNEL 50A - 600V - TO-247
Very Fast PowerMESH™ IGBT
Figure 1: Package
Figure 2: Internal Schematic Diagram
PACKAGE
Max Clip Pressure: 150 N/mm
Weight: 4.41gr ± 0.01
TO-247
STGW40NC60V
TO-247
PACKAGING
1
TUBE
Rev. 10
2
2
3
1/10

Related parts for STGW40NC60V

STGW40NC60V Summary of contents

Page 1

... N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH™ IGBT Figure 1: Package (Max) I CE(sat) C @25°C @100°C < 2 Max Clip Pressure: 150 N/mm Figure 2: Internal Schematic Diagram MARKING PACKAGE GW40NC60V STGW40NC60V TO-247 Weight: 4.41gr ± 0.01 PACKAGING TO-247 TUBE Rev. 10 1/10 ...

Page 2

... STGW40NC60V Table 3: Absolute Maximum ratings Symbol V Collector-Emitter Voltage (V CES V Reverse Battery Protection ECR V Gate-Emitter Voltage GE I Collector Current (continuous) at 25°C (#) C I Collector Current (continuous) at 100°C (#) C I (1) Collector Current (pulsed Total Dissipation at T TOT Derating Factor T Storage Temperature stg T Operating Junction Temperature j (1)Pulse width limited by max ...

Page 3

... V = 390 3 15V, Tj 125°C (see Figure 18) Test Conditions V = 390 3 °C J (see Figure 18 390 3 125 °C (see Figure 18) STGW40NC60V Min. Typ. Max. Unit 20 S 4550 pF 350 pF 105 pF 214 200 A Min. Typ. Max. Unit A/µs 2060 µJ 330 450 1900 A/µs 640 µJ Min ...

Page 4

... STGW40NC60V Figure 3: Output Characteristics Figure 4: Transconductance Figure 5: Collector-Emitter On Voltage vs Col- lector Current 4/10 Figure 6: Transfer Characteristics Figure 7: Collector-Emitter On Voltage vs Tem- perature Figure 8: Normalized Gate Threshold vs Tem- perature ...

Page 5

... Figure 9: Normalized Breakdown Voltage vs Temperature Figure 10: Capacitance Variations Figure 11: Total Switching Losses vs Gate Re- sistance Figure 12: Gate Charge vs Gate-Emitter Volt- age Figure 13: Total Switching Losses vs Temper- ature Figure 14: Total Switching Losses vs Collector Current STGW40NC60V 5/10 ...

Page 6

... STGW40NC60V Figure 15: Thermal Impedance Figure 16: Turn-Off SOA 6/10 Figure 17 Frequency For a fast IGBT suitable for high frequency appli- cations, the typical collector current vs. maximum operating frequency curve is reported. That fre- quency is defined as follows MAX The maximum power dissipation is limited by maximum junction to case thermal resistance: ...

Page 7

... Figure 18: Test Circuit for Inductive Load Switching Figure 19: Switching Waveforms Figure 20: Gate Charge Test Circuit STGW40NC60V 7/10 ...

Page 8

... STGW40NC60V DIM. MIN. A 4.85 A1 2.20 b 1.0 b1 2.0 b2 3.0 c 0.40 D 19.85 E 15. 14.20 L1 3.70 L2 øP 3.55 øR 4.50 S 8/10 TO-247 MECHANICAL DATA mm. TYP MAX. MIN. 5.15 0.19 2.60 0.086 1.40 0.039 2.40 0.079 3.40 0.118 0.80 0.015 20.15 0.781 15.75 0.608 5.45 14 ...

Page 9

... Table 10: Revision History Date Revision 13-Jul-2004 9 14-Jul-2004 10 Description of Changes Stylesheet update. No content change Some datas have been updated STGW40NC60V 9/10 ...

Page 10

... STGW40NC60V Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...

Related keywords