IXGH17N100AU1 IXYS, IXGH17N100AU1 Datasheet - Page 2

• Manufacturer Part Number: IXGH17N100AU1
• Description: IGBT LOW VOLT 1000V 34A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH17N100AU1

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 17A
• Current - Collector (ic) (max): 34A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 34
• Ic90, Tc=90°c, Igbt, (a): 17
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 450
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 17
• Rthjc, Max, Diode, (ºc/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
Symbol
g
C
C
C
Q
Q
Q
t
t
t
t
E
t
t
E
t
t
E
R
R
Reverse Diode (FRED)
Symbol
V
I
t
R
ri
fi
ri
fi
rr
d(on)
d(off)
d(on)
d(off)
RM
fs
off
on
off
ies
oes
res
thJC
thCK
F
thJC
g
ge
gc
Test Conditions
I
Pulse test, t
V
I
Test Conditions
I
Pulse test, t
I
V
I
Inductive load, T
I
V
Remarks: Switching times
may increase
for V
higher T
Inductive load, T
I
V
Remarks: Switching times
may increase
for V
higher T
C
F
F
F
C
C
C
CE
R
CE
CE
= I
= I
= 1 A; -di/dt = 100 A/ s; V
= I
= I
= I
= 540 V
= 25 V, V
= 0.8 V
= 0.8 V
= I
C90
C90
C90
C90
CE
C90
CE
, V
, V
C90
, V
, V
, V
(Clamp) > 0.8 • V
(Clamp) > 0.8 • V
J
J
; V
GE
GE
GE
or increased R
or increased R
GE
GE
CES
CES
= 0 V,
= 0 V, -di
CE
= 15 V, V
= 15 V, L = 300 H,
= 15 V, L = 300 H
GE
, R
, R
300 s, duty cycle
300 s, duty cycle d
= 10 V,
= 0 V, f = 1 MHz
G
G
J
J
= R
= R
= 25 C
= 125 C
F
CE
off
off
/dt = 240 A/ s
= 82
= 82
= 0.5 V
G
G
CES
CES
,
,
R
(T
(T
= 30 V T
J
J
CES
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
2 %
17N100U1
17N100AU1
17N100AU1
17N100U1
17N100AU1
17N100U1
17N100AU1
2 %
T
J
J
= 125 C
= 25 C
min.
min.
Characteristic Values
Characteristic Values
6
1500
1200
typ.
0.25
typ.
120
210
100
100
200
500
750
450
100
200
700
750
2.5
16
35
4,835,592
4,850,072
15
40
20
60
3
8
6
max.
max.
1000
1000
2000
1000
0.83 K/W
120
750
2.5
18
50
30
90
1 K/W
4,881,106
4,931,844
K/W
mJ
mJ
nC
nC
nC
mJ
mJ
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
S
V
A
5,017,508
5,034,796
TO-247 AD Outline
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
IXGH 17N100U1
IXGH 17N100AU1
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025