IXGH17N100AU1 IXYS, IXGH17N100AU1 Datasheet - Page 6

• Manufacturer Part Number: IXGH17N100AU1
• Description: IGBT LOW VOLT 1000V 34A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFAST™r

Specifications of IXGH17N100AU1

• Voltage - Collector Emitter Breakdown (max): 1000V
• Vce(on) (max) @ Vge, Ic: 4V @ 15V, 17A
• Current - Collector (ic) (max): 34A
• Power - Max: 150W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 1kV
• Gate To Emitter Voltage (max): ±20V
• Package Type: TO-247AD
• Pin Count: 3
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Vces, (v): 1000
• Ic25, Tc=25°c, Igbt, (a): 34
• Ic90, Tc=90°c, Igbt, (a): 17
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4
• Tfi, Typ, Tj=25°c, Igbt, (ns): 450
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6
• Rthjc, Max, Igbt, (°c/w): 0.83
• If, Tj=110°c, Diode, (a): 17
• Rthjc, Max, Diode, (ºc/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
1.00
0.10
0.01
0.001
Fig.17 Diode Transient Thermal resistance junction to case
0.01
Pulse Width - Seconds
4,835,592
4,850,072
4,881,106
4,931,844
0.1
5,017,508
5,034,796
IXGH 17N100U1
IXGH 17N100AU1
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
1