IXBX25N250 IXYS, IXBX25N250 Datasheet - Page 3

• Manufacturer Part Number: IXBX25N250
• Description: IGBT 2500V 55A 300W PLUS247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBX25N250

• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 25A
• Current - Collector (ic) (max): 55A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 2500
• Ic25, Tc=25°c, (a): 55
• Ic90, Tc=90°c, (a): 25
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 640
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.42
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

© 2010 IXYS CORPORATION, All Rights Reserved
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
50
45
40
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
5
0
5
0
0
0
5
0.5
7
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
1
9
Fig. 5. Collector-to-Emitter Voltage
1
vs. Gate-to-Emitter Voltage
1.5
11
I
1.5
C
12.5A
= 50A
13
2
25A
V
V
V
CE
CE
GE
2.5
- Volts
15
- Volts
- Volts
2
17
3
2.5
V
V
GE
GE
3.5
19
= 25V
= 25V
J
20V
15V
J
20V
15V
= 125ºC
3
= 25ºC
T
J
21
4
= 25ºC
3.5
10V
10V
5V
4.5
23
25
5
4
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GE
2
-25
-25
= 15V
Fig. 6. Breakdown & Threshold Voltages
4
V
GE
Fig. 4. Dependence of V
0
0
= 25V
vs. Junction Temperature
6
20V
Junction Temperature
T
T
I
J
J
25
25
C
- Degrees Centigrade
- Degrees Centigrade
= 50A
8
15V
10V
V
CE
I
10
50
50
- Volts
C
= 25A
IXBX25N250
V
BV
12
GE(
CES
75
75
I
th
C
)
CE(sat)
= 12.5A
14
100
100
on
16
J
= 25ºC
125
125
18
150
150
20