IXBX25N250 IXYS, IXBX25N250 Datasheet - Page 4

• Manufacturer Part Number: IXBX25N250
• Description: IGBT 2500V 55A 300W PLUS247
• Manufacturer: IXYS
• Series: BIMOSFET™r

Specifications of IXBX25N250

• Voltage - Collector Emitter Breakdown (max): 2500V
• Vce(on) (max) @ Vge, Ic: 3.3V @ 15V, 25A
• Current - Collector (ic) (max): 55A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: PLUS247™-3
• Vces, (v): 2500
• Ic25, Tc=25°c, (a): 55
• Ic90, Tc=90°c, (a): 25
• Vce(sat), Typ, Tj=25°c, (v): 3.3
• Tf Typ, Tj=25°c, (ns): 640
• Gate Drive, (v): 15
• Rthjc, Max, (k/w): 0.42
• Package Style: PLUS247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -

IXYS Reserves the Right to Change Limits, Test Conditions and Dimensions.
10,000
1,000
100
80
70
60
50
40
30
20
10
60
50
40
30
20
10
10
0
0
0.6
4.0
0
f
0.8
4.5
= 1 MHz
Fig. 9. Forward Voltage Drop of Intrinsic Diode
5
1.0
5.0
1.2
10
5.5
Fig. 7. Input Admittance
T
1.4
J
T
Fig. 11. Capacitance
6.0
J
= 125ºC
15
- 40ºC
= 25ºC
C res
25ºC
1.6
V
V
6.5
V
CE
F
GE
C oes
- Volts
1.8
- Volts
20
- Volts
C ies
7.0
2.0
T
25
7.5
J
= 125ºC
2.2
8.0
2.4
30
8.5
2.6
35
9.0
2.8
3.0
9.5
40
90
80
70
60
50
40
30
20
10
30
25
20
15
10
16
14
12
10
0
5
0
8
6
4
2
0
250
0
0
V
I
I
5
C
G
CE
10
T
R
dv / dt < 10V / ns
500
= 25A
= 10mA
J
G
= 1kV
= 125ºC
= 4.7Ω
Fig. 12. Reverse-Bias Safe Operating Area
10
20
750
15
30
Fig. 8. Transconductance
20
1000
Fig. 10. Gate Charge
40
Q
25
G
- NanoCoulombs
1250
I
V
C
CE
50
30
- Amperes
- Volts
35
1500
60
IXBX25N250
40
70
1750
T
J
45
= - 40ºC
80
125ºC
2000
25ºC
50
90
55
2250
100
60
2500
110
65