STGF10NC60SD STMicroelectronics, STGF10NC60SD Datasheet - Page 4

• Manufacturer Part Number: STGF10NC60SD
• Description: IGBT 600V 10A 25W TP220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.65V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 25 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10003-5

Electrical characteristics
2
4/16
Electrical characteristics
(T
Table 4.
Table 5.
V
Symbol
V
Symbol
V
J
(BR)CES
CE(sat)
I
I
=25°C unless otherwise specified)
GE(th)
C
C
GES
C
CES
Q
Q
g
Q
oes
fs
ies
res
ge
gc
g
Collector-emitter breakdown
voltage (V
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
(V
Gate-emitter leakage
(V
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
GE
CE
Static
Dynamic
=0)
=0)
Parameter
Parameter
GE
= 0)
Doc ID 15847 Rev 2
I
V
V
V
V
V
V
V
C
V
V
V
Figure 18
GE
GE
CE
CE
CE
GE
CE
= 1 mA
GE
CE
CE
= 15 V, I
= 15 V, I
= V
= 600 V
=600 V, T
= ±20 V
= 15 V
= 25 V, f = 1 MHz, V
= 480 V, I
= 15 V
Test conditions
GE
Test conditions
, I
,
C
C
C
I
= 250 µA
= 5 A
= 5 A, T
J
C
=125 °C
C
= 5 A
= 5 A,
STGD10NC60SD, STGF10NC60SD
J
= 125 °C
GE
= 0
Min. Typ. Max.
Min.
3.75
600
-
-
365
3.5
44
18
Typ.
1.45
1.45
8
8
3.5
Max. Unit
±100
1.65
5.75
150
-
-
1
Unit
nC
nC
nC
pF
pF
pF
mA
µA
nA
V
V
V
V
S