STGF10NC60SD STMicroelectronics, STGF10NC60SD Datasheet - Page 6

• Manufacturer Part Number: STGF10NC60SD
• Description: IGBT 600V 10A 25W TP220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF10NC60SD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.65V @ 15V, 5A
• Current - Collector (ic) (max): 10A
• Power - Max: 25W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.45 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 10 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 25 W
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-10003-5

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
(norm)
V
V
I
1.15
1.05
0.95
C
CE(sat)
CES
1.1
0.9
(V)
30
(A)
25
20
15
10
2.5
1.5
0.5
1
5
0
3
2
1
-50
0
Electrical characteristics (curves)
0
Output characteristics
Collector-emitter on voltage vs
collector current
Normalized breakdown voltage vs
temperature
V
GE
= 15 V
2
4
0
T
J
= 25 ºC
4
V
8
I
C
GE
= 1 mA
50
= 15 V
12
6
T
J
V
V
V
V
V
= 150 ºC
GE
GE
GE
GE
GE
100
= 11 V
= 10 V
= 8 V
= 7 V
= 9 V
T
16
8
J
= -50 ºC
AM07262v1
AM07264v1
V
AM07266v1
CE
T
I
C
J
10
(V)
20
150
(A)
(ºC)
Doc ID 15847 Rev 2
Figure 3.
Figure 5.
Figure 7.
I
(norm)
V
C
V
(A)
GE(th)
CE(sat)
(V)
30
25
20
15
10
1.1
0.9
0.8
0.7
0.6
5
0
1.8
1.6
1.4
1.2
1
2
1
0
-50
-50
Transfer characteristics
Collector-emitter on voltage vs
temperature
Normalized gate threshold vs
temperature
STGD10NC60SD, STGF10NC60SD
2
0
0
4
I
V
C
V
V
I
C
= 250 µA
CE
I
GE
GE
C
I
C
= 2.5 A
= 10 A
= 10 V
50
= 15 V
= 5 A
50
= V
6
CE
8
100
100
10
AM08265v1
AM07267V1
AM07263v1
T
V
T
J
J
GE
(ºC)
(°C)
12
(V)