STGF19NC60WD STMicroelectronics, STGF19NC60WD Datasheet - Page 5

• Manufacturer Part Number: STGF19NC60WD
• Description: IGBT N-CHAN 7A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF19NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 14A
• Power - Max: 32W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 14A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 32W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-7477-5; STGF19NC60WD

STGF19NC60WD
Table 5.
Table 6.
1. Eon is the turn-on losses when a typical diode is used in the test circuit in
2. Turn-off losses include also the tail of the collector current
Symbol
(di/dt)
(di/dt)
Symbol
t
t
E
E
E
E
t
t
t
t
r
r
in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the
same temperature (25°C and 125°C)
d
d
d(on)
d(on)
(V
(V
E
E
on
off
on
off
(
(
t
t
t
t
off
off
r
r
f
f
ts
ts
off
off
(1)
(2)
(1)
(2)
on
on
)
)
)
)
Turn-on delay time
Current rise time
Turn-on current slope
Turn-on delay time
Current rise time
Turn-on current slope
Off voltage rise time
Turn-off delay time
Current fall time
Off voltage rise time
Turn-off delay time
Current fall time
Turn-on switching losses
Turn-off switching losses
Total switching losses
Turn-on switching losses
Turn-off switching losses
Total switching losses
Switching on/off (inductive load)
Switching energy (inductive load)
Parameter
Parameter
V
R
Figure 17
V
R
Tj = 125°C
Figure 17
V
R
Figure 17
V
R
Tj = 125°C
Figure 17
V
R
Figure 17
V
R
Tj = 125°C
Figure 17
CC
CC
G
G
CC
CC
CC
CC
G
G
G
G
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 10Ω , V
= 390V, I
= 390V, I
= 390V, I
= 390V, I
= 390V, I
= 390V, I
Test conditions
Test conditions
GE
GE
GE
GE
GE
GE
C
C
C
C
C
C
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 15V,
= 12A
= 12A
= 12A
= 12A
= 12A
= 12A
Figure 15
Electrical characteristics
Min.
Min.
If the IGBT is offered
1600
1400
Typ.
Typ.
127
125
206
161
255
416
25
25
22
90
43
47
77
81
7
8
Max.
Max.
A/µs
A/µs
Unit
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µJ
µJ
µJ
µJ
µJ
µJ
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