STGF19NC60WD STMicroelectronics, STGF19NC60WD Datasheet - Page 8

• Manufacturer Part Number: STGF19NC60WD
• Description: IGBT N-CHAN 7A 600V TO-220FP
• Manufacturer: STMicroelectronics
• Series: PowerMESH™r

Specifications of STGF19NC60WD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.5V @ 15V, 12A
• Current - Collector (ic) (max): 14A
• Power - Max: 32W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Collector Current (dc) (max): 14A
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 3 +Tab
• Mounting: Through Hole
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Transistor Type: IGBT
• Dc Collector Current: 14A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Pd: 32W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 497-7477-5; STGF19NC60WD

Electrical characteristics
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Figure 7.
Figure 9.
Figure 11. Switching losses vs gate resistance Figure 12. Switching losses vs collector
Normalized gate threshold voltage
vs temperature
Normalized breakdown voltage vs
temperature
Figure 8.
Figure 10. Switching losses vs temperature
Collector-emitter on voltage vs
collector current
current
STGF19NC60WD