IXGP30N120B3 IXYS, IXGP30N120B3 Datasheet - Page 3

• Manufacturer Part Number: IXGP30N120B3
• Description: IGBT PT 1200V 30A TO-220
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGP30N120B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 204
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.1
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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8
7
6
5
4
3
2
60
50
40
30
20
10
60
50
40
30
20
10
0
0
6
0.0
0.0
0.5
0.5
7
Fig. 3. Output Characteristics @ T
15A
Fig. 1. Output Characteristics @ T
1.0
1.0
Fig. 5. Collector-to-Emitter Voltage vs.
8
1.5
1.5
30A
Gate-to-Emitter Voltage
9
2.0
2.0
V
CE
V
10
V
I
CE
C
GE
- Volts
= 60A
- Volts
2.5
2.5
- Volts
11
V
GE
V
3.0
3.0
GE
= 15V
13V
11V
= 15V
12
13V
11V
3.5
3.5
J
J
= 125ºC
= 25ºC
13
T
4.0
4.0
7V
9V
J
9V
7V
5V
= 25ºC
14
4.5
4.5
5.0
5.0
15
200
180
160
140
120
100
1.6
1.4
1.2
1.0
0.8
0.6
60
50
40
30
20
10
80
60
40
20
0
0
4.5
-50
0
V
Fig. 2. Extended Output Characteristics @ T
IXGA30N120B3 IXGP30N120B3
GE
5.0
3
= 15V
-25
5.5
6
Fig. 4. Dependence of V
0
6.0
T
9
Fig. 6. Input Admittance
J
JunctionTemperature
= 125ºC
T
J
- 40ºC
25
25ºC
- Degrees Centigrade
6.5
12
V
CE
V
GE
- Volts
7.0
15
50
- Volts
V
I
I
I
GE
C
C
C
= 30A
= 60A
= 15A
= 15V
IXGH30N120B3
7.5
18
75
13V
11V
9V
7V
CE(sat)
8.0
21
100
on
8.5
24
J
= 25ºC
125
9.0
27
150
9.5
30