IXGP30N120B3 IXYS, IXGP30N120B3 Datasheet - Page 4

• Manufacturer Part Number: IXGP30N120B3
• Description: IGBT PT 1200V 30A TO-220
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGP30N120B3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 60
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 204
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.1
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
24
20
16
12
100
8
4
0
10
0.0001
0
0
f
= 1 MHz
10
5
10
20
Fig. 7. Transconductance
Fig. 9. Capacitance
15
30
0.001
I
C
V
CE
- Amperes
T
J
- Volts
20
= - 40ºC
40
25ºC
125ºC
25
C oes
C res
C ies
Fig. 11. Maximum Transient Thermal Impedance
50
30
60
0.01
35
Pulse Width - Seconds
70
40
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
200
0
T
R
dv / dt < 10V / ns
IXGA30N120B3 IXGP30N120B3
300
V
I
I
J
G
C
G
CE
0.1
= 125ºC
10
= 5Ω
= 30A
= 10mA
= 600V
Fig. 10. Reverse-Bias Safe Operating Area
400
20
500
30
Fig. 8. Gate Charge
Q
600
G
- NanoCoulombs
V
40
CE
700
- Volts
1
50
800
IXGH30N120B3
900
60
1000
70
1100
80
1200
10
90