IXGH30N120B3D1 IXYS, IXGH30N120B3D1 Datasheet - Page 3

• Manufacturer Part Number: IXGH30N120B3D1
• Description: IGBT PT 1200V 30A W/DIO TO247AD
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH30N120B3D1

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.5V @ 15V, 30A
• Current - Collector (ic) (max): 30A
• Power - Max: 300W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 50
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): 30
• Vce(sat), Max, Tj=25°c, Igbt, (v): 3.5
• Tfi, Typ, Tj=25°c, Igbt, (ns): 204
• Eoff, Typ, Tj=125°c, Igbt, (mj): 5.10
• Rthjc, Max, Igbt, (°c/w): 0.42
• If, Tj=110°c, Diode, (a): 28
• Rthjc, Max, Diode, (ºc/w): 0.9
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
60
55
50
45
40
35
30
25
20
15
10
60
55
50
45
40
35
30
25
20
15
10
5
0
5
0
0.0
0.0
6
0.5
0.5
7
15A
Fig. 5. Collector-to-Emitter Voltage
1.0
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
8
vs. Gate-to-Emitter Voltage
1.5
1.5
30A
9
2.0
V
2.0
V
CE
V
@ 125ºC
CE
@ 25ºC
10
GE
- Volts
I
C
- Volts
2.5
2.5
- Volts
= 60A
V
11
GE
V
GE
3.0
3.0
= 15V
= 15V
13V
11V
13V
11V
12
3.5
3.5
13
4.0
4.0
T
7V
9V
J
9V
7V
5V
= 25ºC
14
4.5
4.5
5.0
5.0
15
200
180
160
140
120
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
65
60
55
50
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
4.5
-50
0
V
GE
5.0
Fig. 2. Extended Output Characteristics
3
-25
= 15V
Fig. 4. Dependence of V
5.5
6
0
Fig. 6. Input Admittance
T
Junction Temperature
6.0
J
9
T
= 125ºC
J
- 40ºC
- Degrees Centigrade
25
25ºC
6.5
12
V
CE
V
@ 25ºC
GE
- Volts
7.0
IXGH30N120B3D1
50
15
IXGT30N120B3D1
- Volts
V
I
I
I
GE
C
C
C
= 60A
= 30A
= 15A
7.5
= 15V
18
75
13V
11V
7V
9V
CE(sat)
8.0
21
100
8.5
24
on
125
9.0
27
150
9.5
30