IXGH30N120B3D1 IXYS, IXGH30N120B3D1 Datasheet - Page 6

IGBT PT 1200V 30A W/DIO TO247AD

IXGH30N120B3D1

Manufacturer Part Number
IXGH30N120B3D1
Description
IGBT PT 1200V 30A W/DIO TO247AD
Manufacturer
IXYS
Series
GenX3™r
Datasheet

Specifications of IXGH30N120B3D1

Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.5V @ 15V, 30A
Current - Collector (ic) (max)
30A
Power - Max
300W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247AD
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
50
Ic90, Tc=90°c, Igbt, (a)
-
Ic110, Tc=110°c, Igbt, (a)
30
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.5
Tfi, Typ, Tj=25°c, Igbt, (ns)
204
Eoff, Typ, Tj=125°c, Igbt, (mj)
5.10
Rthjc, Max, Igbt, (°c/w)
0.42
If, Tj=110°c, Diode, (a)
28
Rthjc, Max, Diode, (ºc/w)
0.9
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGH30N120B3D1
Manufacturer:
SEIKO
Quantity:
14 600
IXYS reserves the right to change limits, test conditions, and dimensions.
180
160
140
120
100
130
120
110
100
80
60
40
20
90
80
70
60
50
40
30
20
10
0
25
5
Switching Times vs. Junction Temperature
t
R
V
t
T
V
Switching Times vs. Gate Resistance
r
CE
35
r
G
J
CE
7
= 125ºC, V
= 5Ω , V
= 960V
= 960V
45
9
Fig. 20. Inductive Turn-on
Fig. 18. Inductive Turn-on
GE
t
d(on)
11
T
55
t
GE
d(on)
J
= 15V
- Degrees Centigrade
= 15V
- - - -
R
13
65
- - - -
I
G
C
- Ohms
= 30A
I
15
75
C
= 60A
17
I
85
C
= 60A
19
95
I
C
= 30A
105
21
115
23
125
25
50
46
42
38
34
30
26
22
18
14
26
25
24
23
22
21
20
19
18
17
16
15
14
110
100
90
80
70
60
50
40
30
20
10
0
15
Switching Times vs. Collector Current
t
R
V
20
r
CE
G
= 5Ω , V
= 960V
Fig. 19. Inductive Turn-on
25
GE
t
d(on)
30
= 15V
T
- - - -
J
= 125ºC, 25ºC
35
I
C
- Amperes
40
IXGH30N120B3D1
IXGT30N120B3D1
45
IXYS REF: G_30N120B3(4A)5-06-08-A
50
55
60
30
28
26
24
22
20
18
16
14
12
10
8

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