IXGH50N120C3 IXYS, IXGH50N120C3 Datasheet - Page 3

• Manufacturer Part Number: IXGH50N120C3
• Description: IGBT PT 1200V 50A TO-247
• Manufacturer: IXYS
• Series: GenX3™r

Specifications of IXGH50N120C3

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 4.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 460W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 75
• Ic90, Tc=90°c, Igbt, (a): -
• Ic110, Tc=110°c, Igbt, (a): -
• Vce(sat), Max, Tj=25°c, Igbt, (v): 4.2
• Tfi, Typ, Tj=25°c, Igbt, (ns): 64
• Eoff, Typ, Tj=125°c, Igbt, (mj): 2.1
• Rthjc, Max, Igbt, (°c/w): 0.27
• If, Tj=110°c, Diode, (a): -
• Rthjc, Max, Diode, (ºc/w): -
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2008 IXYS CORPORATION, All rights reserved
100
100
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
0.5
0.5
6
Fig. 5. Collector-to-Emitter Voltage
1.0
1.0
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
7
vs. Gate-to-Emitter Voltage
1.5
1.5
8
2.0
V
2.0
9
V
CE
V
@ 125ºC
CE
@ 25ºC
2.5
GE
- Volts
- Volts
25A
2.5
10
- Volts
3.0
V
50A
GE
I
3.0
11
V
C
3.5
= 15V
GE
= 100A
13V
11V
= 15V
3.5
12
13V
11V
4.0
T
4.0
J
13
4.5
= 25ºC
9V
7V
5V
9V
7V
5V
5.0
4.5
14
5.5
5.0
15
275
250
225
200
175
150
125
100
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
90
80
70
60
50
40
30
20
10
75
50
25
0
0
4.0
25
0
V
Fig. 2. Extended Output Characteristics
GE
3
4.5
= 15V
13V
Fig. 4. Dependence of V
50
6
Fig. 6. Input Admittance
5.0
Junction Temperature
9
11V
9V
7V
5V
T
J
T
- Degrees Centigrade
J
= 125ºC
V
12
75
CE
- 40ºC
5.5
V
@ 25ºC
25ºC
GE
IXGH50N120C3
- Volts
15
- Volts
I
I
I
C
C
C
6.0
= 100A
= 50A
= 25A
100
18
CE(sat)
21
6.5
125
24
V
on
GE
7.0
= 15V
27
150
7.5
30